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Transistor count

Number of transistors in a device

Summary

Number of transistors in a device

The transistor count is the number of transistors in an electronic device (typically on a single substrate or silicon die). It is the most common measure of integrated circuit complexity (although the majority of transistors in modern microprocessors are contained in cache memories, which consist mostly of the same memory cell circuits replicated many times). The rate at which MOS transistor counts have increased generally follows Moore's law, which observes that transistor count doubles approximately every two years. However, being directly proportional to the area of a die, transistor count does not represent how advanced the corresponding manufacturing technology is. A better indication of this is transistor density which is the ratio of a semiconductor's transistor count to its die area.

Records

, the highest transistor count in flash memory is Micron's 2terabyte (3D-stacked) 16-die, 232-layer V-NAND flash memory chip, with 5.3trillion floating-gate MOSFETs (3bits per transistor).

The highest transistor count in a single chip processor is that of the deep learning processor Wafer Scale Engine 2 by Cerebras. It has 2.6trillion MOSFETs in 84 exposed fields (dies) on a wafer, manufactured using TSMC's 7 nm FinFET process.

, the GPU with the highest transistor count is Nvidia's Blackwell-based B100 accelerator, built on TSMC's custom 4NP process node and totaling 208 billion MOSFETs.

The highest transistor count in a consumer microprocessor is 184billion transistors, in Apple's ARM-based dual-die M3 Ultra SoC, which is fabricated using TSMC's 3 nm semiconductor manufacturing process.

Year	Component	Name	Number of MOSFETs
(in trillions)	Remarks
2022	Flash memory	Micron's V-NAND module	5.3	stacked package of sixteen 232-layer 3D NAND dies
2020	any processor	Wafer Scale Engine 2	2.6	wafer-scale design of 84 exposed fields (dies)
2024	GPU	Nvidia B100	0.208	Uses two reticle limit dies, with 104 billion transistors each, joined and acting as a single large monolithic piece of silicon
2025	Microprocessor
(consumer)	Apple M3 Ultra	0.184	SoC using two dies joined with a high-speed bridge
2020	DLP	Colossus Mk2 GC200	0.059	An IPU (Intelligence Processing Unit) in contrast to CPU and GPU

In terms of computer systems that consist of numerous integrated circuits, the supercomputer with the highest transistor count was the Chinese-designed Sunway TaihuLight, which has for all CPUs/nodes combined "about 400 trillion transistors in the processing part of the hardware" and "the DRAM includes about 12 quadrillion transistors, and that's about 97 percent of all the transistors." To compare, the smallest computer, dwarfed by a grain of rice, had on the order of 100,000 transistors. Early experimental solid-state computers had as few as 130 transistors but used large amounts of diode logic. The first carbon nanotube computer had 178 transistors and was a 1-bit one-instruction set computer, while a later one is 16-bit (its instruction set is 32-bit RISC-V though).

Ionic transistor chips ("water-based" analog limited processor), have up to hundreds of such transistors.

Estimates of the total numbers of transistors manufactured:

Up to 2014:
Up to 2018: {{cite web

Transistor count

Microprocessors

A microprocessor incorporates the functions of a computer's central processing unit on a single integrated circuit. It is a multi-purpose, programmable device that accepts digital data as input, processes it according to instructions stored in its memory, and provides results as output.

The development of MOS integrated circuit technology in the 1960s led to the development of the first microprocessors. The 20-bit MP944, developed by Garrett AiResearch for the U.S. Navy's F-14 Tomcat fighter in 1970, is considered by its designer Ray Holt to be the first microprocessor. It was a multi-chip microprocessor, fabricated on six MOS chips. However, it was classified by the Navy until 1998. The 4-bit Intel 4004, released in 1971, was the first single-chip microprocessor.

Modern microprocessors typically include on-chip cache memories. The number of transistors used for these cache memories typically far exceeds the number of transistors used to implement the logic of the microprocessor (that is, excluding the cache). For example, the last DEC Alpha chip uses 90% of its transistors for cache.

Processor	Transistor count	Year	Designer	Process
(nm)	Area (mm2)	Transistor
density
(tr./mm2)	Processor	Transistor count	Year	Designer	Process
(nm)	Area (mm2)	Transistor
density
(tr./mm2)
MP944 (20-bit, 6-chip, 28 chips total)	74,442 (5,360 excl. ROM & RAM)	last1=Holt	first1=Ray	title=World's First Microprocessor	url=https://www.firstmicroprocessor.com/	quote=1st fully integrated chip set microprocessor	access-date=5 March 2016}}	Garrett AiResearch
Intel 4004 (4-bit, 16-pin)	2,250	1971	Intel	10,000 nm	12 mm2	188
PPS-25 (4-bit, 2-chip)		1971	Fairchild	Likely 10,000 nm
TMX 1795 (8-bit, 24-pin)	3,078	1971	Texas Instruments		30.64 mm2	100.5
Intel 8008 (8-bit, 18-pin)	3,500	1972	Intel	10,000 nm	14 mm2	250
NEC μCOM-4 (4-bit, 42-pin)	2,500	1973	NEC	title=1970s: Development and evolution of microprocessors	url=http://www.shmj.or.jp/english/pdf/ic/exhibi748E.pdf	website=Semiconductor History Museum of Japan	access-date=27 June 2019	url-status=dead	archive-url=https://web.archive.org/web/20190627161417/http://www.shmj.or.jp/english/pdf/ic/exhibi748E.pdf	archive-date=27 June 2019}}
Toshiba TLCS-12 (12-bit)	title=1973: 12-bit engine-control microprocessor (Toshiba)	url=http://www.shmj.or.jp/english/pdf/ic/exhibi739E.pdf	website=Semiconductor History Museum of Japan	access-date=27 June 2019	url-status=dead	archive-url=https://web.archive.org/web/20190627203018/http://www.shmj.or.jp/english/pdf/ic/exhibi739E.pdf	archive-date=27 June 2019}}	1973	Toshiba	6,000 nm	32.45 mm2	340+
Intel 4040 (4-bit, 16-pin)	3,000	1974	Intel	10,000 nm	12 mm2	250
Motorola 6800 (8-bit, 40-pin)	4,100	1974	Motorola	6,000 nm	16 mm2	256
Intel 8080 (8-bit, 40-pin)	6,000	1974	Intel	6,000 nm	20 mm2	300
TMS 1000 (4-bit, 28-pin)	8,000	1974	Texas Instruments	8,000 nm	11 mm2	730
HP Nanoprocessor (8-bit, 40-pin)	4639	1974	Hewlett-Packard		19 mm2
MOS Technology 6502 (8-bit, 40-pin)	4,528	1975	MOS Technology	8,000 nm	21 mm2	216
Intersil IM6100 (12-bit, 40-pin; clone of PDP-8)	4,000	1975	Intersil		2 for outer dimension of chip, not die, need to find it; assuming square die size is ([much] smaller than) 174.4 mm2 --
CDP 1801 (8-bit, 2-chip, 40-pin)	5,000	1975	RCA
RCA 1802 (8-bit, 40-pin)	5,000	1976	RCA	5,000 nm	27 mm2	185
Zilog Z80 (8-bit, 4-bit ALU, 40-pin)	8,500	1976	Zilog	4,000 nm	18 mm2	470
Intel 8085 (8-bit, 40-pin)	6,500	1976	Intel	3,000 nm	20 mm2	325
TMS9900 (16-bit)	8,000	1976	Texas Instruments
Bellmac-8 (8-bit)	7,000	1977	Bell Labs	5,000 nm
Motorola 6809 (8-bit with some 16-bit features, 40-pin)	9,000	1978	Motorola	5,000 nm	21 mm2	430
Intel 8086 (16-bit, 40-pin)	29,000	1978	Intel	3,000 nm	33 mm2	880
Zilog Z8000 (16-bit)	17,500	1979	Zilog	5,000-6,000 nm (design rules)	39.31 mm2 (238x256 mil2)	445
Intel 8088 (16-bit, 8-bit data bus)	29,000	1979	Intel	3,000 nm	33 mm2	880
Motorola 68000 (16/32-bit, 32-bit registers, 16-bit ALU)	68,000	1979	Motorola	3,500 nm	44 mm2	1,550
Intel 8051 (8-bit, 40-pin)	50,000	1980	Intel
WDC 65C02	url=https://web.archive.org/web/20131203015458/http://icarus.cs.weber.edu/home/dferro/ada/Christiansen_Report_Finished/Finishedmicroprocessors.doc	date=December 3, 2013 }} Christiansen	1981	WDC	3,000 nm	6 mm2	1,920
ROMP (32-bit)	45,000	1981	IBM	2,000 nm	58.52 mm2	770
Intel 80186 (16-bit, 68-pin)	55,000	1982	Intel	3,000 nm	60 mm2	920
Intel 80286 (16-bit, 68-pin)	134,000	1982	Intel	1,500 nm	49 mm2	2,730
WDC 65C816 (8/16-bit)	22,000	1983	WDC	3,000 nm	9 mm2	2,400
NEC V20	63,000	1984	NEC
Motorola 68020 (32-bit; 114 pins used)	first=Paul	last=Demone	url=http://www.realworldtech.com/arms-race/	title=ARM's Race to World Domination	publisher=real world technologies	date = 2000-11-09	access-date=2015-07-20}}	1984	Motorola	2,000 nm	85 mm2	2,200
Intel 80386 (32-bit, 132-pin; no cache)	275,000	1985	Intel	1,500 nm	104 mm2	2,640
ARM 1 (32-bit; no cache)	25,000	1985	Acorn	3,000 nm	50 mm2	500
Novix NC4016 (16-bit)	16,000	1985	Harris Corporation	3,000 nm
SPARC MB86900 (32-bit; no cache)	110,000	1986	Fujitsu	1,200 nm
vauthors=Kimura S, Komoto Y, Yano Y	title=Implementation of the V60/V70 and its FRM function	journal=IEEE Micro	volume=8	issue=2	pages=22–36	year=1988	doi=10.1109/40.527	s2cid=9507994 }} (32-bit; no cache)	375,000	1986	NEC	1,500 nm
ARM 2 (32-bit, 84-pin; no cache)	27,000	1986	Acorn	2,000 nm	30.25 mm2	890
Z80000 (32-bit; very small cache)	91,000	1986	Zilog
NEC V70 (32-bit; no cache)	385,000	1987	NEC	1,500 nm
Hitachi Gmicro/200	730,000	1987	Hitachi	1,000 nm
Motorola 68030 (32-bit, very small caches)	273,000	1987	Motorola	800 nm	102 mm2	2,680
TI Explorer's 32-bit Lisp machine chip	author1=Bosshart, P.	author2=Hewes, C.	author3=Mi-Chang Chang	author4=Kwok-Kit Chau	author5=Hoac, C.	author6=Houston, T.	author7=Kalyan, V.	author8=Lusky, S.	author9=Mahant-Shetti, S.	author10=Matzke, D.	author11=Ruparel, K.	author12=Ching-Hao Shaw	author13=Sridhar, T.	author14=Stark, D.	title=A 553K-Transistor LISP Processor Chip	journal=IEEE Journal of Solid-State Circuits	volume=22	issue=5	pages=202–3	date=October 1987	doi=10.1109/ISSCC.1987.1157084	s2cid=195841103 }}	1987	Texas Instruments	2,000 nm
DEC WRL MultiTitan	180,000	1988	DEC WRL	1,500 nm	61 mm2	2,950
Intel i960 (32-bit, 33-bit memory subsystem, no cache)	250,000	1988	Intel	title=Intel i960 Embedded Microprocessor	url=http://micro.magnet.fsu.edu/optics/olympusmicd/galleries/chips/intel960b.html	archive-url=https://web.archive.org/web/20030303223737/http://micro.magnet.fsu.edu/optics/olympusmicd/galleries/chips/intel960b.html	url-status=dead	archive-date=3 March 2003	website=National High Magnetic Field Laboratory	publisher=Florida State University	access-date=29 June 2019	date=3 March 2003}}
Intel i960CA (32-bit, cache)	600,000	1989	Intel	800 nm	143 mm2	4,200
Intel i860 (32/64-bit, 128-bit SIMD, cache, VLIW)	1,000,000	1989	Intel
Intel 80486 (32-bit, 8 KB cache)	1,180,235	1989	Intel	1,000 nm	173 mm2	6,822
ARM 3 (32-bit, 4 KB cache)	310,000	1989	Acorn	1,500 nm	87 mm2	3,600
POWER1 (9-chip module, 72 kB of cache)	6,900,000	1990	IBM	1,000 nm	1,283.61 mm2	5,375
Motorola 68040 (32-bit, 8 KB caches)	1,200,000	1990	Motorola	650 nm	152 mm2	7,900
R4000 (64-bit, 16 KB of caches)	1,350,000	1991	MIPS	1,000 nm	213 mm2	6,340
ARM 6 (32-bit, no cache for this 60 variant)	35,000	1991	ARM	800 nm
Hitachi SH-1 (32-bit, no cache)	600,000	1992	Hitachi	800 nm	100 mm2	6,000
Intel i960CF (32-bit, cache)	900,000	1992	Intel		125 mm2	7,200
Alpha 21064 (64-bit, 290-pin; 16 KB of caches)	1,680,000	1992	DEC	750 nm	233.52 mm2	7,190
Hitachi HARP-1 (32-bit, cache)	2,800,000	1993	Hitachi	500 nm	267 mm2	10,500
Pentium (32-bit, 16 KB of caches)	3,100,000	1993	Intel	800 nm	294 mm2	10,500
POWER2 (8-chip module, 288 kB of cache)	23,037,000	1993	IBM	720 nm	1,217.39 mm2	18,923
ARM700 (32-bit; 8 KB cache)	578,977	1994	ARM	700 nm	68.51 mm2	8,451
MuP21 (21-bit, 40-pin; includes video)	7,000	1994	Offete Enterprises	1,200 nm
Motorola 68060 (32-bit, 16 KB of caches)	2,500,000	1994	Motorola	600 nm	218 mm2	11,500
PowerPC 601 (32-bit, 32 KB of caches)	2,800,000	1994	Apple, IBM, Motorola	600 nm	121 mm2	23,000
PowerPC 603 (32-bit, 16 KB of caches)	1,600,000	1994	Apple, IBM, Motorola	500 nm	84.76 mm2	18,900
PowerPC 603e (32-bit, 32 KB of caches)	2,600,000	1995	Apple, IBM, Motorola	500 nm	98 mm2	26,500
Alpha 21164 EV5 (64-bit, 112 kB cache)	9,300,000	1995	DEC	500 nm	298.65 mm2	31,140
SA-110 (32-bit, 32 KB of caches)	2,500,000	1995	Acorn, DEC, Apple	350 nm	50 mm2	50,000
Pentium Pro (32-bit, 16 KB of caches; L2 cache on-package, but on separate die)	5,500,000	1995	Intel	500 nm	307 mm2	18,000
PA-8000 64-bit, no cache	3,800,000	1995	HP	500 nm	337.69 mm2	11,300
Alpha 21164A EV56 (64-bit, 112 kB cache)	9,660,000	1996	DEC	350 nm	208.8 mm2	46,260
AMD K5 (32-bit, caches)	4,300,000	1996	AMD	500 nm	251 mm2	17,000
Pentium II Klamath (32-bit, 64-bit SIMD, caches)	7,500,000	1997	Intel	350 nm	195 mm2	39,000
AMD K6 (32-bit, caches)	8,800,000	1997	AMD	350 nm	162 mm2	54,000
F21 (21-bit; includes e.g. video)	15,000	url=http://www.ultratechnology.com/f21cpu.html	title=F21 CPU	quote=F21 offers video I/O, analog I/O, serial network I/O, and a parallel I/O port on chip. F21 has a transistor count of about 15,000 vs about 7,000 for MuP21.	website=www.ultratechnology.com	access-date=2019-09-06}}	Offete Enterprises		2 --
AVR (8-bit, 40-pin; w/memory)	140,000 (48,000
excl. memory{{Cite web	url=https://www.embeddedrelated.com/showthread/comp.arch.embedded/14362-1.php	title=Transistor count of common uCs?	author=Ulf Samuelsson	website=www.embeddedrelated.com	quote=IIRC, The AVR core is 12,000 gates, and the megaAVR core is 20,000 gates. Each gate is 4 transistors. The chip is considerably larger since the memory uses quite a lot.	1997	Nordic VLSI/Atmel
Pentium II Deschutes (32-bit, large cache)	7,500,000	1998	Intel	250 nm	113 mm2	66,000
Alpha 21264 EV6 (64-bit)	15,200,000	1998	DEC	350 nm	313.96 mm2	48,400
Alpha 21164PC PCA57 (64-bit, 48 kB cache)	5,700,000	1998	Samsung	280 nm	100.5 mm2	56,700
Hitachi SH-4 (32-bit, caches)	last1=Nakagawa	first1=Norio	last2=Arakawa	first2=Fumio	date=April 1999	title=Entertainment Systems and High-Performance Processor SH-4	url=https://www.hitachi.com/rev/1999/revapr99/r2_103.pdf	journal=Hitachi Review	volume=48	issue=2	pages=58–63	access-date=2023-03-18	3,200,000
ARM 9TDMI (32-bit, no cache)	111,000	1999	Acorn	350 nm	4.8 mm2	23,100
Pentium III Katmai (32-bit, 128-bit SIMD, caches)	9,500,000	1999	Intel	250 nm	128 mm2	74,000
Emotion Engine (64-bit, 128-bit SIMD, cache)	last1=Hennessy	first1=John L.	author-link1=John L. Hennessy	last2=Patterson	first2=David A.	author-link2=David Patterson (scientist)	title=Computer Architecture: A Quantitative Approach	page=491	url=https://books.google.com/books?id=XX69oNsazH4C&pg=PA491	access-date=9 April 2013	edition=3	date=29 May 2002	publisher=Morgan Kaufmann	isbn=978-0-08-050252-6}}	1999	Sony, Toshiba	250 nm	last1=Diefendorff	first1=Keith	title=Sony's Emotionally Charged Chip: Killer Floating-Point "Emotion Engine" To Power PlayStation 2000	journal=Microprocessor Report	date=April 19, 1999	volume=13	issue=5	s2cid=29649747	url=http://pdfs.semanticscholar.org/9248/eea6c98e5a7fc45606d9d562a0e74707ce43.pdf	archive-url=https://web.archive.org/web/20190228125309/http://pdfs.semanticscholar.org/9248/eea6c98e5a7fc45606d9d562a0e74707ce43.pdf	url-status=dead	archive-date=February 28, 2019	access-date=19 June 2019}}	43,800 – 56,300
Pentium II Mobile Dixon (32-bit, caches)	27,400,000	1999	Intel	180 nm	180 mm2	152,000
AMD K6-III (32-bit, caches)	21,300,000	1999	AMD	250 nm	118 mm2	181,000
AMD K7 (32-bit, caches)	22,000,000	1999	AMD	250 nm	184 mm2	120,000
Gekko (32-bit, large cache)	title=NVIDIA GeForce 7800 GTX GPU Review	url=https://pcper.com/2005/06/nvidia-geforce-7800-gtx-gpu-review/	website=PC Perspective	access-date=18 June 2019	date=22 June 2005}}	2000	IBM, Nintendo	180 nm	43 mm2	490,000 (check)
Pentium III Coppermine (32-bit, large cache)	21,000,000	2000	Intel	180 nm	80 mm2	263,000
Pentium 4 Willamette (32-bit, large cache)	42,000,000	2000	Intel	180 nm	217 mm2	194,000
SPARC64 V (64-bit, large cache)	191,000,000	2001	Fujitsu	130 nm	290 mm2	659,000
Pentium III Tualatin (32-bit, large cache)	45,000,000	2001	Intel	130 nm	81 mm2	556,000
Pentium 4 Northwood (32-bit, large cache)	55,000,000	2002	Intel	130 nm	145 mm2	379,000
Itanium 2 McKinley (64-bit, large cache)	220,000,000	2002	Intel	180 nm	421 mm2	523,000
Alpha 21364 (64-bit, 946-pin, SIMD, very large caches)	url=https://en.wikichip.org/wiki/compaq/microarchitectures/alpha_21364	title=Alpha 21364 - Microarchitectures - Compaq - WikiChip	website=en.wikichip.org	access-date=2019-09-08}}	2003	DEC	180 nm	397 mm2	383,000
AMD K7 Barton (32-bit, large cache)	54,300,000	2003	AMD	130 nm	101 mm2	538,000
AMD K8 (64-bit, large cache)	105,900,000	2003	AMD	130 nm	193 mm2	548,700
Pentium M Banias (32-bit)	77,000,000	2003	Intel	130 nm	83 mm2	928,000
Itanium 2 Madison 6M (64-bit)	410,000,000	2003	Intel	130 nm	374 mm2	1,096,000
PlayStation 2 single chip (CPU + GPU)	53,500,000	url=https://playstationdev.wiki/ps2devwiki/EE%2BGS	title=EE+GS	website=PS2 Dev Wiki	2003	date=2003-11-27	title=Sony MARKETING (JAPAN) ANNOUNCES LAUNCH OF "PSX" DESR-5000 and DESR-7000 TOWARDS THE END OF 2003	url=https://www.sony.com/en/SonyInfo/News/Press_Archive/200310/03-1007E/	publisher=Sony	Sony, Toshiba	90 nm	title=EMOTION ENGINE AND GRAPHICS SYNTHESIZER USED IN THE CORE OF PLAYSTATION BECOME ONE CHIP	url=https://www.sie.com/content/dam/corporate/en/corporate/release/pdf/030421be.pdf
Pentium 4 Prescott (32-bit, large cache)	112,000,000	2004	Intel	90 nm	110 mm2	1,018,000
Pentium M Dothan (32-bit)	144,000,000	2004	Intel	90 nm	87 mm2	1,655,000
SPARC64 V+ (64-bit, large cache)	400,000,000	2004	Fujitsu	90 nm	294 mm2	1,360,000
Itanium 2 (64-bit;9 MB cache)	592,000,000	2004	Intel	130 nm	432 mm2	1,370,000
Pentium 4 Prescott-2M (32-bit, large cache)	169,000,000	2005	Intel	90 nm	143 mm2	1,182,000
Pentium D Smithfield (64-bit, large cache)	228,000,000	2005	Intel	90 nm	206 mm2	1,107,000
Xenon (64-bit, 128-bit SIMD, large cache)	165,000,000	2005	IBM	90 nm
Cell (32-bit, cache)	250,000,000	2005	Sony, IBM, Toshiba	90 nm	221 mm2	1,131,000
Pentium 4 Cedar Mill (32-bit, large cache)	184,000,000	2006	Intel	65 nm	90 mm2	2,044,000
Core 2 Quad Kenfield (64-bit)	582,000,000	2006	Intel	65 nm --
Pentium D Presler (64-bit, large cache)	362,000,000	2006	Intel	65 nm	162 mm2	2,235,000
Core 2 Duo Conroe (dual-core 64-bit, large caches)	291,000,000	2006	Intel	65 nm	143 mm2	2,035,000
Dual-core Itanium 2 (64-bit, SIMD, large caches)	1,700,000,000	2006	Intel	90 nm	596 mm2	2,852,000
AMD K10 quad-core 2M L3 (64-bit, large caches)	first=Bert	last=Toepelt	url=http://www.tomshardware.com/reviews/phenom-ii-940,2114.html	title=AMD Phenom II X4: 45nm Benchmarked — The Phenom II And AMD's Dragon Platform	publisher=TomsHardware.com	date=2009-01-08	access-date=2014-08-09}}	2007	AMD	65 nm	283 mm2	1,636,000
ARM Cortex-A9 (32-bit, (optional) SIMD, caches)	26,000,000	2007	ARM	45 nm	31 mm2	839,000
Core 2 Duo Wolfdale (dual-core 64-bit, SIMD, caches)	411,000,000	2007	Intel	45 nm	107 mm2	3,841,000
POWER6 (64-bit, large caches)	789,000,000	2007	IBM	65 nm	341 mm2	2,314,000
Core 2 Duo Allendale (dual-core 64-bit, SIMD, large caches)	169,000,000	2007	Intel	65 nm	111 mm2	1,523,000
Uniphier	title=Panasonic starts to sell a New-generation UniPhier System LSI	url=http://panasonic.co.jp/corp/news/official.data/data.dir/en071010-3/en071010-3.html	access-date=2 July 2019	publisher=Panasonic	date=October 10, 2007}}	2007	Matsushita	45 nm
SPARC64 VI (64-bit, SIMD, large caches)	540,000,000	2007	Fujitsu	90 nm	421 mm2	1,283,000
Core 2 Duo Wolfdale 3M (dual-core 64-bit, SIMD, large caches)	230,000,000	2008	Intel	45 nm	83 mm2	2,771,000
Core i7 (quad-core 64-bit, SIMD, large caches)	731,000,000	2008	Intel	45 nm	263 mm2	2,779,000
AMD K10 quad-core 6M L3 (64-bit, SIMD, large caches)	758,000,000	2008	AMD	45 nm	258 mm2	2,938,000
Atom (32-bit, large cache)	47,000,000	2008	Intel	45 nm	24 mm2	1,958,000
SPARC64 VII (64-bit, SIMD, large caches)	600,000,000	2008	Fujitsu	65 nm	445 mm2	1,348,000
Six-core Xeon 7400 (64-bit, SIMD, large caches)	1,900,000,000	2008	Intel	45 nm	503 mm2	3,777,000
Six-core Opteron 2400 (64-bit, SIMD, large caches)	904,000,000	2009	AMD	45 nm	346 mm2	2,613,000
SPARC64 VIIIfx (64-bit, SIMD, large caches)	760,000,000	2009	Fujitsu	45 nm	513 mm2	1,481,000
Atom (Pineview) 64-bit, 1-core, 512 kB L2 cache	123,000,000{{cite web	url=https://ark.intel.com/content/www/us/en/ark/products/42503/intel-atom-processor-n450-512k-cache-1-66-ghz.html	title=Intel Atom N450 specifications	website=Intel	access-date=2023-06-08	2010	Intel	45 nm	66 mm2	1,864,000
Atom (Pineview) 64-bit, 2-core, 1 MB L2 cache	176,000,000{{cite web	url=https://ark.intel.com/content/www/us/en/ark/products/43098/intel-atom-processor-d510-1m-cache-1-66-ghz.html	title=Intel Atom D510 specifications	website=Intel	access-date=2023-06-08	2010	Intel	45 nm	87 mm2	2,023,000
SPARC T3 (16-core 64-bit, SIMD, large caches)	1,000,000,000	2010	Sun/Oracle	40 nm	377 mm2	2,653,000
Six-core Core i7 (Gulftown)	1,170,000,000	2010	Intel	32 nm	240 mm2	4,875,000
POWER7 32M L3 (8-core 64-bit, SIMD, large caches)	1,200,000,000	2010	IBM	45 nm	567 mm2	2,116,000
Quad-core z196 (64-bit, very large caches)	1,400,000,000	2010	IBM	45 nm	512 mm2	2,734,000
Quad-core Itanium Tukwila (64-bit, SIMD, large caches)	2,000,000,000	2010	Intel	65 nm	699 mm2	2,861,000	12-core Opteron 6100	1,810,000,000	2010	AMD	45 nm	692 mm2 --
Xeon Nehalem-EX (8-core 64-bit, SIMD, large caches)	2,300,000,000	2010	Intel	45 nm	684 mm2	3,363,000
SPARC64 IXfx (64-bit, SIMD, large caches)	url = https://www.theregister.co.uk/2011/11/21/fujitsu_sparc64_ixfx_fx10_details	title = Fujitsu parades 16-core Sparc64 super stunner	first = Timothy Prickett	last = Morgan	date = November 21, 2011	work = The Register	access-date = December 8, 2011}}	2011	Fujitsu	40 nm	484 mm2	3,864,000
Quad-core + GPU Core i7 (64-bit, SIMD, large caches)	1,160,000,000	2011	Intel	32 nm	216 mm2	5,370,000
Six-core Core i7/8-core Xeon E5
(Sandy Bridge-E/EP) (64-bit, SIMD, large caches)	2,270,000,000	2011	Intel	32 nm	434 mm2	5,230,000
Xeon Westmere-EX (10-core 64-bit, SIMD, large caches)	2,600,000,000	2011	Intel	32 nm	512 mm2	5,078,000
Atom "Medfield" (64-bit)	432,000,000	2012	Intel	32 nm	64 mm2	6,750,000
SPARC64 X (64-bit, SIMD, caches)	2,990,000,000	2012	Fujitsu	28 nm	600 mm2	4,983,000
AMD Bulldozer (8-core 64-bit, SIMD, caches)	1,200,000,000{{cite web	url=http://www.anandtech.com/showdoc.aspx?i=3276&p=9	archive-url=https://web.archive.org/web/20090122105244/http://www.anandtech.com/showdoc.aspx?i=3276&p=9	url-status=dead	archive-date=January 22, 2009	title=Intel's Atom Architecture: The Journey Begins	publisher=AnandTech	access-date=April 4, 2010	2012	AMD	32 nm	315 mm2	3,810,000
Quad-core + GPU AMD Trinity (64-bit, SIMD, caches)	1,303,000,000	2012	AMD	32 nm	246 mm2	5,297,000
Quad-core + GPU Core i7 Ivy Bridge (64-bit, SIMD, caches)	1,400,000,000	2012	Intel	22 nm	160 mm2	8,750,000
POWER7+ (8-core 64-bit, SIMD, 80 MB L3 cache)	2,100,000,000	2012	IBM	32 nm	567 mm2	3,704,000
Six-core zEC12 (64-bit, SIMD, large caches)	2,750,000,000	2012	IBM	32 nm	597 mm2	4,606,000
Itanium Poulson (8-core 64-bit, SIMD, caches)	3,100,000,000	2012	Intel	32 nm	544 mm2	5,699,000
Xeon Phi (61-core 32-bit, 512-bit SIMD, caches)	5,000,000,000	2012	Intel	22 nm	720 mm2	6,944,000
Apple A7 (dual-core 64/32-bit ARM64, "mobile SoC", SIMD, caches)	1,000,000,000	2013	Apple	28 nm	102 mm2	9,804,000
Six-core Core i7 Ivy Bridge E (64-bit, SIMD, caches)	1,860,000,000	2013	Intel	22 nm	256 mm2	7,266,000
POWER8 (12-core 64-bit, SIMD, caches)	4,200,000,000	2013	IBM	22 nm	650 mm2	6,462,000
Xbox One main SoC (64-bit, SIMD, caches)	5,000,000,000	2013	Microsoft, AMD	28 nm	363 mm2	13,770,000
Quad-core + GPU Core i7 Haswell (64-bit, SIMD, caches)	last1=Shimpi	first1=Lal	title=The Haswell Review: Intel Core i7-4770K & i5-4670K Tested	url=http://www.anandtech.com/show/7003/the-haswell-review-intel-core-i74770k-i54560k-tested/5	archive-url=https://web.archive.org/web/20130607024813/http://www.anandtech.com/show/7003/the-haswell-review-intel-core-i74770k-i54560k-tested/5	url-status=dead	archive-date=June 7, 2013	website=anandtech	access-date=20 November 2014}}	2014	Intel	22 nm	177 mm2	7,910,000
Apple A8 (dual-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)	2,000,000,000	2014	Apple	20 nm	89 mm2	22,470,000
Core i7 Haswell-E (8-core 64-bit, SIMD, caches)	2,600,000,000	2014	Intel	22 nm	355 mm2	7,324,000
Apple A8X (tri-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)	3,000,000,000	2014	Apple	20 nm	128 mm2	23,440,000
Xeon Ivy Bridge-EX (15-core 64-bit, SIMD, caches)	4,310,000,000	2014	Intel	22 nm	541 mm2	7,967,000
Xeon Haswell-E5 (18-core 64-bit, SIMD, caches)	title=Intel Xeon E5-2600 v3 Processor Overview: Haswell-EP Up to 18 Cores	url=http://www.pcper.com/reviews/Processors/Intel-Xeon-E5-2600-v3-Processor-Overview-Haswell-EP-18-Cores/5	website=pcper	date=September 8, 2014	access-date=29 January 2015}}	2014	Intel	22 nm	661 mm2	8,411,000
Quad-core + GPU GT2 Core i7 Skylake K (64-bit, SIMD, caches)	1,750,000,000	2015	Intel	14 nm	122 mm2	14,340,000
Dual-core + GPU Iris Core i7 Broadwell-U (64-bit, SIMD, caches)	title=Intel's Broadwell-U arrives aboard 15W, 28W mobile processors	date=January 5, 2015	url=http://techreport.com/news/27557/intel-broadwell-u-arrives-aboard-15w-28w-mobile-processors	access-date=5 January 2015	publisher=TechReport}}	2015	Intel	14 nm	133 mm2	14,290,000
Apple A9 (dual-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)	2,000,000,000+	2015	Apple	14 nm
(Samsung)	96 mm2
(Samsung)	20,800,000+
16 nm
(TSMC)	104.5 mm2
(TSMC)	19,100,000+
Apple A9X (dual core 64/32-bit ARM64 "mobile SoC", SIMD, caches)	3,000,000,000+	2015	Apple	16 nm	143.9 mm2	20,800,000+
IBM z13 (64-bit, caches)	3,990,000,000	2015	IBM	22 nm	678 mm2	5,885,000
IBM z13 Storage Controller	7,100,000,000	2015	IBM	22 nm	678 mm2	10,472,000
SPARC M7 (32-core 64-bit, SIMD, caches)	10,000,000,000	2015	Oracle	20 nm
Core i7 Broadwell-E (10-core 64-bit, SIMD, caches)	3,200,000,000	2016	Intel	14 nm	246 mm2	13,010,000
Apple A10 Fusion (quad-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)	3,300,000,000	2016	Apple	16 nm	125 mm2	26,400,000
	HiSilicon Kirin 960 (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)	4,000,000,000	2016	Huawei	16 nm	110.00 mm2	36,360,000
Xeon Broadwell-E5 (22-core 64-bit, SIMD, caches)	7,200,000,000	2016	Intel	14 nm	456 mm2	15,790,000
Xeon Phi (72-core 64-bit, 512-bit SIMD, caches)	8,000,000,000	2016	Intel	14 nm	683 mm2	11,710,000
Zip CPU (32-bit, for FPGAs)	1,286 6-LUTs	2016	Gisselquist Technology
Qualcomm Snapdragon 835 (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)	3,000,000,000	2016	Qualcomm	10 nm	72.3 mm2	41,490,000
Apple A11 Bionic (hexa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)	4,300,000,000	2017	Apple	10 nm	89.23 mm2	48,190,000
AMD Zen CCX (core complex unit: 4 cores, 8 MB L3 cache)	1,400,000,000{{Cite conference	first=Teja	last=Singh	book-title=Proc. IEEE International Solid-State Circuits Conference	title=3.2 Zen: A Next-Generation High-Performance x86 Core	pages=52–54	date=2017}}	2017	AMD	14 nm
(GF 14LPP)	44 mm2	31,800,000
AMD Zeppelin SoC Ryzen (64-bit, SIMD, caches)	last1=Cutress	first1=Ian	title=AMD Launches Zen	url=http://www.anandtech.com/show/11143/amd-launch-ryzen-52-more-ipc-eight-cores-for-under-330-preorder-today-on-sale-march-2nd	archive-url=https://web.archive.org/web/20170222153341/http://www.anandtech.com/show/11143/amd-launch-ryzen-52-more-ipc-eight-cores-for-under-330-preorder-today-on-sale-march-2nd	url-status=dead	archive-date=February 22, 2017	access-date=22 February 2017	publisher=Anandtech.com	date=22 February 2017}}	2017	AMD	14 nm	192 mm2	25,000,000
AMD Ryzen 5 1600 Ryzen (64-bit, SIMD, caches)	4,800,000,000	2017	AMD	14 nm	213 mm2	22,530,000
IBM z14 (64-bit, SIMD, caches)	6,100,000,000	2017	IBM	14 nm	696 mm2	8,764,000
IBM z14 Storage Controller (64-bit)	9,700,000,000	2017	IBM	14 nm	696 mm2	13,940,000
	HiSilicon Kirin 970 (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)	5,500,000,000	2017	Huawei	10 nm	96.72 mm2	56,900,000
Xbox One X (Project Scorpio) main SoC (64-bit, SIMD, caches)	7,000,000,000	2017	Microsoft, AMD	16 nm	url=http://www.eurogamer.net/articles/digitalfoundry-2017-project-scorpio-tech-revealed	title=Inside the next Xbox: Project Scorpio tech revealed	last=Leadbetter	first=Richard	date=2017-04-06	website=Eurogamer	access-date=2017-05-03}}	19,440,000
Xeon Platinum 8180 (28-core 64-bit, SIMD, caches)	8,000,000,000	2017	Intel	14 nm
Xeon (unspecified)	7,100,000,000{{Cite web	first=Stefano	last=Pellerano	url=https://youtube.com/watch?v=pFQj6L4eKc0	title=Circuit Design to Harness the Power of Scaling and Integration (ISSCC 2022)	website=YouTube	date=2022-03-02}}	2017	Intel	14 nm	672 mm2	10,570,000
POWER9 (64-bit, SIMD, caches)	8,000,000,000	2017	IBM	14 nm	695 mm2	11,500,000
Freedom U500 Base Platform Chip (E51, 4×U54) RISC-V (64-bit, caches)	250,000,000	2017	SiFive	28 nm	~30 mm2	8,330,000
SPARC64 XII (12-core 64-bit, SIMD, caches)	5,450,000,000	2017	Fujitsu	20 nm	795 mm2	6,850,000
	Apple A10X Fusion (hexa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)	4,300,000,000	2017	Apple	10 nm	96.40 mm2	44,600,000
Centriq 2400 (64/32-bit, SIMD, caches)	18,000,000,000	2017	Qualcomm	10 nm	398 mm2	45,200,000
AMD Epyc (32-core 64-bit, SIMD, caches)	19,200,000,000	2017	AMD	14 nm	768 mm2	25,000,000
Qualcomm Snapdragon 845 (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)	5,300,000,000	2017	Qualcomm	10 nm	94 mm2	56,400,000
Qualcomm Snapdragon 850 (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)	5,300,000,000	2017	Qualcomm	10 nm	94 mm2	56,400,000
	HiSilicon Kirin 710 (octa-core ARM64 "mobile SoC", SIMD, caches)	5,500,000,000	2018	Huawei	12 nm
	Apple A12 Bionic (hexa-core ARM64 "mobile SoC", SIMD, caches)	last1=Yang	first1=Daniel	last2=Wegner	first2=Stacy	url=http://www.techinsights.com/about-techinsights/overview/blog/apple-iphone-xs-teardown/	title=Apple iPhone Xs Max Teardown	publisher=TechInsights	date=September 21, 2018	access-date=September 21, 2018}}	2018	Apple	7 nm	83.27 mm2	82,900,000
	HiSilicon Kirin 980 (octa-core ARM64 "mobile SoC", SIMD, caches)	6,900,000,000	2018	Huawei	7 nm	74.13 mm2	93,100,000
Qualcomm Snapdragon 8cx / SCX8180 (octa-core ARM64 "mobile SoC", SIMD, caches)	8,500,000,000	2018	Qualcomm	7 nm	112 mm2	75,900,000
	Apple A12X Bionic (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)	10,000,000,000	2018	Apple	7 nm	122 mm2	82,000,000
Fujitsu A64FX (64/32-bit, SIMD, caches)	8,786,000,000	2018	Fujitsu	7 nm
Tegra Xavier SoC (64/32-bit)	9,000,000,000	2018	Nvidia	12 nm	350 mm2	25,700,000
Qualcomm Snapdragon 855 (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)	6,700,000,000	2018	Qualcomm	7 nm	73 mm2	91,800,000
AMD Zen 2 core (0.5 MB L2 + 4 MB L3 cache)	475,000,000	2019	AMD	7 nm	7.83 mm2	60,664,000
AMD Zen 2 CCX (core complex: 4 cores, 16 MB L3 cache)	1,900,000,000{{cite web	url=https://en.wikichip.org/wiki/amd/microarchitectures/zen_2	title=Zen 2 Microarchitecture	website=WikiChip	access-date=2023-02-21}}	2019	AMD	7 nm	31.32 mm2	60,664,000
AMD Zen 2 CCD (core complex die: 8 cores, 32 MB L3 cache)	3,800,000,000	2019	AMD	7 nm	74 mm2	51,350,000
AMD Zen 2 client I/O die	2,090,000,000	2019	AMD	12 nm	125 mm2	16,720,000
AMD Zen 2 server I/O die	8,340,000,000	2019	AMD	12 nm	416 mm2	20,050,000
AMD Zen 2 Renoir die	9,800,000,000	2019	AMD	7 nm	156 mm2	62,820,000
AMD Ryzen 7 3700X (64-bit, SIMD, caches, I/O die)	5,990,000,000	2019	AMD	7 & 12 nm
(TSMC)	199
(74+125) mm2	30,100,000
HiSilicon Kirin 990 4G	8,000,000,000	2019	Huawei	7 nm	90.00 mm2	89,000,000
Apple A13 (hexa-core 64-bit ARM64 "mobile SoC", SIMD, caches)	8,500,000,000
2019	Apple	7 nm	98.48 mm2	86,300,000
IBM z15 CP chip (12 cores, 256 MB L3 cache)	9,200,000,000	2019	IBM	14 nm	696 mm2	13,220,000
IBM z15 SC chip (960 MB L4 cache)	12,200,000,000	2019	IBM	14 nm	696 mm2	17,530,000
AMD Ryzen 9 3900X (64-bit, SIMD, caches, I/O die)	title=AMD's 64-Core EPYC and Ryzen CPUs Stripped: A Detailed Inside Look	url=https://www.tomshardware.com/news/amd-64-core-epyc-cpu-die-design-architecture-ryzen-3000	last=Broekhuijsen	first=Niels	date=23 October 2019	access-date=24 October 2019}}	2019	AMD	7 & 12 nm
(TSMC)	273 mm2	36,230,000
HiSilicon Kirin 990 5G	10,300,000,000	2019	Huawei	7 nm	113.31 mm2	90,900,000
AWS Graviton2 (64-bit, 64-core ARM-based, SIMD, caches)	30,000,000,000	2019	Amazon	7 nm
AMD Epyc Rome (64-bit, SIMD, caches)	39,540,000,000
2019	AMD	7 & 12 nm
(TSMC)	1,008 mm2	39,226,000
Qualcomm Snapdragon 865 (octa-core 64/32-bit ARM64 "mobile SoC", SIMD, caches)	10,300,000,000	2019	Qualcomm	7 nm	83.54 mm2	123,300,000
TI Jacinto TDA4VM (ARM A72, DSP, SRAM)	3,500,000,000	2020	Texas Instruments	16 nm
Apple A14 Bionic (hexa-core 64-bit ARM64 "mobile SoC", SIMD, caches)	11,800,000,000	2020	Apple	5 nm	88 mm2	134,100,000
Apple M1 (octa-core 64-bit ARM64 SoC, SIMD, caches)	16,000,000,000	2020	Apple	5 nm	119 mm2	134,500,000
HiSilicon Kirin 9000	15,300,000,000
2020	Huawei	5 nm	114 mm2	134,200,000
AMD Zen 3 CCX (core complex unit: 8 cores, 32 MB L3 cache)	4,080,000,000{{Cite conference	first=Thomas	last=Burd	book-title=Proc. IEEE International Solid-State Circuits Conference	title=2.7 Zen3: The AMD 2nd-Generation 7nm x86-64 Microprocessor Core	pages=54–56	date=2022}}	2020	AMD	7 nm	68 mm2	60,000,000
AMD Zen 3 CCD (core complex die)	4,150,000,000	2020	AMD	7 nm	81 mm2	51,230,000
Core 11th gen Rocket Lake (8-core 64-bit, SIMD, large caches)	6,000,000,000+	2021	Intel	14 nm +++ 14 nm	276 mm2	37,500,000 or 21,800,000+
AMD Ryzen 7 5800H (64-bit, SIMD, caches, I/O and GPU)	10,700,000,000	2021	AMD	7 nm	180 mm2	59,440,000
AMD Epyc 7763 (Milan) (64-core, 64-bit)	?	2021	AMD	7 & 12 nm
(TSMC)	1,064 mm2
(8×81+416)
Apple A15	15,000,000,000
2021	Apple	5 nm	107.68 mm2	139,300,000
Apple M1 Pro (10-core, 64-bit)	33,700,000,000	2021	Apple	5 nm	title=Apple Announces M1 Pro & M1 Max: Giant New Arm SoCs with All-Out Performance	url=https://www.anandtech.com/show/17019/apple-announced-m1-pro-m1-max-giant-new-socs-with-allout-performance	archive-url=https://web.archive.org/web/20211018202419/https://www.anandtech.com/show/17019/apple-announced-m1-pro-m1-max-giant-new-socs-with-allout-performance	url-status=dead	archive-date=October 18, 2021	access-date=2021-12-02	website=AnanadTech	language=en}}	137,600,000
Apple M1 Max (10-core, 64-bit)	title=Apple unveils new computer chips amid shortage	url=https://www.bbc.com/news/technology-58917992	work=BBC News	date=19 October 2021}}	2021	Apple	5 nm	title=Apple Joins 3D-Fabric Portfolio with M1 Ultra?	url=https://www.techinsights.com/blog/apple-joins-3d-fabric-portfolio-m1-ultra	website=TechInsights	access-date=2022-07-08}}	135,600,000
Power10 dual-chip module (30 SMT8 cores or 60 SMT4 cores)	36,000,000,000	2021	IBM	7 nm	1,204 mm2	29,900,000
Dimensity 9000 (ARM64 SoC)	15,300,000,000
{{cite web	url=https://www.mediatek.com/blog/phantom-x2-series-5g-powered-by-mediatek-dimensity-9000	title=Phantom X2 Series 5G powered by MediaTek Dimensity 9000	website=Mediatek	date=2022-12-12	url=https://www.mediatek.com/products/smartphones-2/mediatek-dimensity-9000	title=MediaTek Dimensity 9000	website=Mediatek	date=2023-01-21	2021	Mediatek	[4 nm
(TSMC N4)](5-nm-process)
Apple A16 (ARM64 SoC)	16,000,000,000
{{cite web	url=https://www.notebookcheck.net/Apple-A16-Bionic-announced-for-the-iPhone-14-Pro-and-iPhone-14-Pro-Max.647967.0.html	title=Apple A16 Bionic announced for the iPhone 14 Pro and iPhone 14 Pro Max	website=NotebookCheck	date=2022-09-07	url=https://www.cnet.com/tech/mobile/iphone-14-pro-and-pro-max-only-models-to-get-new-a16-chip/	title=iPhone 14 Pro and Pro Max Only Models to Get New A16 Chip	website=CNET	date=2022-09-07	url=https://www.anandtech.com/print/17563/the-apple-2022-fall-iphone-event-live-blog-10am-pt-1700-utc	archive-url=https://web.archive.org/web/20220908130723/https://www.anandtech.com/print/17563/the-apple-2022-fall-iphone-event-live-blog-10am-pt-1700-utc	url-status=dead	archive-date=September 8, 2022
Apple M1 Ultra (dual-chip module, 2×10 cores)	title=Apple unveils M1 Ultra, the world's most powerful chip for a personal computer	url=https://www.apple.com/newsroom/2022/03/apple-unveils-m1-ultra-the-worlds-most-powerful-chip-for-a-personal-computer/	website=Apple Newsroom	access-date=9 March 2022}}	2022	Apple	5 nm	840.5 mm2	135,600,000
AMD Epyc 7773X (Milan-X) (multi-chip module, 64 cores, 768 MB L3 cache)	url=https://www.anandtech.com/print/17323/amd-releases-milan-x-cpus-with-3d-vcache-epyc-7003	archive-url=https://web.archive.org/web/20220329091441/https://www.anandtech.com/print/17323/amd-releases-milan-x-cpus-with-3d-vcache-epyc-7003	url-status=dead	archive-date=March 29, 2022	title=AMD releases Milan-X CPUs	website=AnandTech	date=2022-03-21}}	2022	AMD	7 & 12 nm
(TSMC)	1,352 mm2
(Milan + 8×36)
IBM Telum dual-chip module (2×8 cores, 2×256 MB cache)	45,000,000,000
2022	IBM	7 nm (Samsung)	1,060 mm2	42,450,000
Apple M2 (octa-core 64-bit ARM64 SoC, SIMD, caches)	20,000,000,000	2022	Apple	5 nm
Dimensity 9200 (ARM64 SoC)	17,000,000,000
{{cite web	url=https://www.notebookcheck.net/MediaTek-Dimensity-9200-New-flagship-chipset-debuts-with-ARM-Cortex-X3-CPU-and-Immortalis-G715-GPU-cores-built-around-TSMC-N4P-node.667041.0.html	title=MediaTek Dimensity 9200: New flagship chipset debuts with ARM Cortex-X3 CPU and Immortalis-G715 GPU cores built around TSMC N4P node	website=NotebookCheck	date=2022-11-08	url=https://www.mediatek.com/products/smartphones-2/mediatek-dimensity-9200	title=Dimensity 9200 specs	website=Mediatek	date=2022-11-08	url=https://i.mediatek.com/dimensity-9200	title=Dimensity 9200 presentation	website=Mediatek	date=2022-11-08
Qualcomm Snapdragon 8 Gen 2 (octa-core ARM64 "mobile SoC", SIMD, caches)	16,000,000,000	2022	Qualcomm	4 nm	268 mm2	59,701,492
AMD EPYC Genoa (4th gen/9004 series) 13-chip module (up to 96 cores and 384 MB (L3) + 96 MB (L2) cache){{cite web	url=https://www.servethehome.com/amd-epyc-genoa-gaps-intel-xeon-in-stunning-fashion/	title=AMD EPYC Genoa Gaps Intel Xeon in Stunning Fashion	website=ServeTheHome	date=2022-11-10	90,000,000,000
{{cite web	url=https://appuals.com/amd-zettaflop-plans/	title=AMD Aims to Break the ZettaFLOP Barrier by 2035, Lays Down Next-Gen Plans to Resolve Efficiency Problems	website=Appuals	date=2023-02-21	url=https://wccftech.com/amd-lays-the-path-to-zettascale-computing-talks-cpu-gpu-performance-plus-efficiency-trends-next-gen-chiplet-packaging-more/	title=AMD Lays The Path To Zettascale Computing: Talks CPU & GPU Performance Plus Efficiency Trends, Next-Gen Chiplet Packaging & More	website=WCCFtech	date=2023-02-20
HiSilicon Kirin 9000s	9,510,000,000	2023	Huawei	7 nm	107 mm2	107,690,000
Apple M4 (deca-core 64-bit ARM64 SoC, SIMD, caches)	date=2024-05-07	title=Apple Announces M4 SoC: Latest and Greatest Starts on 2024 iPad Pro	url=https://www.anandtech.com/show/21387/apple-announces-m4-soc-latest-and-greatest-starts-on-ipad-pro/	archive-url=https://web.archive.org/web/20240507182846/https://www.anandtech.com/show/21387/apple-announces-m4-soc-latest-and-greatest-starts-on-ipad-pro	url-status=dead	archive-date=May 7, 2024	website=Anandtech}}	2024	Apple	3 nm
Apple M3 (octa-core 64-bit ARM64 SoC, SIMD, caches)	date=2023-10-31	title=Apple introduces new M3 chip lineup, starting with the M3, M3 Pro, and M3 Max	url=https://arstechnica.com/gadgets/2023/10/everything-to-know-about-apples-new-m3-m3-pro-and-m3-max-processors/	website=Arstechnica}}	2023	Apple	3 nm
Apple M3 Pro (dodeca-core 64-bit ARM64 SoC, SIMD, caches)	37,000,000,000	2023	Apple	3 nm
Apple M3 Max (16-core 64-bit ARM64 SoC, SIMD, caches)	92,000,000,000	2023	Apple	3 nm
Apple A17	19,000,000,000
2023	Apple	3 nm	103.8 mm2	183,044,315
Sapphire Rapids quad-chip module (up to 60 cores and 112.5 MB of cache){{cite web	url=https://www.servethehome.com/4th-gen-intel-xeon-scalable-sapphire-rapids-leaps-forward/	title=4th Gen Intel Xeon Scalable Sapphire Rapids Leaps Forward	website=ServeTheHome	date=2023-01-10	44,000,000,000–
48,000,000,000{{cite web	url=https://www.hardwareluxx.de/index.php/news/hardware/prozessoren/58175-isscc-2022-wie-vier-dies-zu-einem-monolithischen-sapphire-rapids-werden.html	title=Wie vier Dies zu einem "monolithischen" Sapphire Rapids werden	website=hardwareLUXX	date=2022-02-21	2023	Intel	10 nm ESF (Intel 7)	1,600 mm2
Apple M2 Pro (12-core 64-bit ARM64 SoC, SIMD, caches)	40,000,000,000{{cite press release	url=https://www.apple.com/newsroom/2023/01/apple-unveils-m2-pro-and-m2-max-next-generation-chips-for-next-level-workflows/	title=Apple unveils M2 Pro and M2 Max: next-generation chips for next-level workflows	website=Apple	date=2023-01-17	2023	Apple	5 nm
Apple M2 Max (12-core 64-bit ARM64 SoC, SIMD, caches)	67,000,000,000	2023	Apple	5 nm
Apple M2 Ultra (two M2 Max dies)	134,000,000,000{{cite press release	date=2023-06-05	title=Apple introduces M2 Ultra	url=https://www.apple.com/newsroom/2023/06/apple-introduces-m2-ultra/	publisher=Apple	2023	Apple	5 nm
AMD Epyc Bergamo (4th gen/97X4 series) 9-chip module (up to 128 cores and 256 MB (L3) + 128 MB (L2) cache)	82,000,000,000{{cite web	url=https://www.servethehome.com/amd-epyc-bergamo-launched-128-cores-per-socket-and-1024-threads-per-1u/	title=AMD EPYC Bergamo Launched 128 Cores Per Socket and 1024 Threads Per 1U	website=ServeTheHome	date=2023-06-13	2023	AMD	5 nm (CCD)
6 nm (IOD)
AMD Instinct MI300A (multi-chip module, 24 cores, 128 GB GPU memory + 256 MB (LLC/L3) cache)	146,000,000,000{{cite web	url=https://www.amd.com/en/products/accelerators/instinct/mi300/mi300a.html	title=AMD Instinct MI300A Accelerators	website=AMD	access-date=January 14, 2024	last=Alcorn	first=Paul	url=https://www.tomshardware.com/pc-components/cpus/amd-unveils-instinct-mi300x-gpu-and-mi300a-apu-claims-up-to-16x-lead-over-nvidias-competing-gpus	title=AMD unveils Instinct MI300X GPU and MI300A APU, claims up to 1.6X lead over Nvidia's competing GPUs	website=Tom's Hardware	date=December 6, 2023	access-date=January 14, 2024	2023
RV32-WUJI: 3-atom-thick molybdenum disulfide on sapphire; RISC-V architecture	5931	2025		3000 nm

GPUs

A graphics processing unit (GPU) is a specialized electronic circuit designed to rapidly manipulate and alter memory to accelerate the building of images in a frame buffer intended for output to a display.

The designer refers to the technology company that designs the logic of the integrated circuit chip (such as Nvidia and AMD). The manufacturer ("Fab.") refers to the semiconductor company that fabricates the chip using its semiconductor manufacturing process at a foundry (such as TSMC and Samsung Semiconductor). The transistor count in a chip is dependent on a manufacturer's fabrication process, with smaller semiconductor nodes typically enabling higher transistor density and thus higher transistor counts.

The random-access memory (RAM) that comes with GPUs (such as VRAM, SGRAM or HBM) greatly increases the total transistor count, with the memory typically accounting for the majority of transistors in a graphics card. For example, Nvidia's Tesla P100 has 15billion FinFETs (16 nm) in the GPU in addition to 16GB of HBM2 memory, totaling about 150billion MOSFETs on the graphics card. The following table does not include the memory. For memory transistor counts, see the Memory section below.

Processor	Transistor count	Year	Designer(s)	Fab(s)	Process	Area	Transistor
density
(tr./mm2)	Ref	Processor	Transistor count	Year	Designer(s)	Fab(s)	MOS process	Area	Transistor
density
(tr./mm2)	Ref
μPD7220 GDC	40,000	1982	NEC	NEC	5,000 nm
ARTC HD63484	60,000	1984	Hitachi	Hitachi
CBM Agnus	21,000	1985	Commodore	CSG	5,000 nm
YM7101 VDP	100,000	1988	Yamaha, Sega	Yamaha				title=30 Years of Console Gaming	url=https://klingerphotography.com/wp/2017/08/20/30-years-console-gaming/	website=Klinger Photography	access-date=19 June 2019	date=20 August 2017}}
Tom & Jerry	750,000	1993	Flare	IBM
VDP1	1,000,000	1994	Sega	Hitachi	500 nm
Sony GPU	1,000,000	1994	Toshiba	LSI	500 nm
NV1	1,000,000	1995	Nvidia, Sega	SGS	500 nm	90 mm2	11,000
Reality Coprocessor	2,600,000	1996	SGI	NEC	350 nm	81 mm2	32,100	title=Reality Co-Processor − The Power In Nintendo64	url=http://www.hotchips.org/wp-content/uploads/hc_archives/hc09/3_Tue/HC9.S10/HC9.10.2.pdf	publisher=Silicon Graphics	date=August 26, 1997	access-date=18 June 2019	archive-date=May 19, 2020	archive-url=https://web.archive.org/web/20200519051320/http://www.hotchips.org/wp-content/uploads/hc_archives/hc09/3_Tue/HC9.S10/HC9.10.2.pdf	url-status=dead }}
PowerVR	1,200,000	1996	VideoLogic	NEC	350 nm
Voodoo Graphics	1,000,000	1996	3dfx	TSMC	500 nm			last1=Lilly	first1=Paul	title=From Voodoo to GeForce: The Awesome History of 3D Graphics	url=https://www.pcgamer.com/from-voodoo-to-geforce-the-awesome-history-of-3d-graphics/	magazine=PC Gamer	access-date=19 June 2019	date=19 May 2009}}
Voodoo Rush	1,000,000	1997	3dfx	TSMC	500 nm
NV3	3,500,000	1997	Nvidia	SGS, TSMC	350 nm	90 mm2	38,900
i740	3,500,000	1998	Intel, Real3D	Real3D	350 nm
Voodoo 2	4,000,000	1998	3dfx	TSMC	350 nm
Voodoo Rush	4,000,000	1998	3dfx	TSMC	350 nm
NV4	7,000,000	1998	Nvidia	TSMC	350 nm	90 mm2	78,000
PowerVR2 CLX2	10,000,000	1998	VideoLogic	NEC	250 nm	116 mm2	86,200	title=Remembering the Sega Dreamcast	url=https://bit-tech.net/reviews/gaming/retro/remembering-the-sega-dreamcast/3/	website=Bit-Tech	access-date=18 June 2019	date=September 29, 2009}}
PowerVR2 PMX1	6,000,000	1999	VideoLogic	NEC	250 nm
Rage 128	8,000,000	1999	ATI	TSMC, UMC	250 nm	70 mm2	114,000
Voodoo 3	8,100,000	1999	3dfx	TSMC	250 nm
Graphics Synthesizer	43,000,000	1999	Sony, Toshiba	Sony, Toshiba	180 nm	279 mm2	154,000	title=EMOTION ENGINE AND GRAPHICS SYNTHESIZER USED IN THE CORE OF PLAYSTATION BECOME ONE CHIP	url=https://www.sie.com/content/dam/corporate/en/corporate/release/pdf/030421be.pdf	access-date=26 June 2019	publisher=Sony	date=April 21, 2003}}
NV5	15,000,000	1999	Nvidia	TSMC	250 nm	90 mm2	167,000
NV10	17,000,000	1999	Nvidia	TSMC	220 nm	111 mm2	153,000
NV11	20,000,000	2000	Nvidia	TSMC	180 nm	65 mm2	308,000
NV15	25,000,000	2000	Nvidia	TSMC	180 nm	81 mm2	309,000
Voodoo 4	14,000,000	2000	3dfx	TSMC	220 nm
Voodoo 5	28,000,000	2000	3dfx	TSMC	220 nm
R100	30,000,000	2000	ATI	TSMC	180 nm	97 mm2	309,000
Flipper	51,000,000	2000	ArtX	NEC	180 nm	106 mm2	481,000	url=https://ign.com/articles/2000/11/04/gamecube-versus-playstation-2	title=Gamecube Versus PlayStation 2	author=IGN Staff	date=November 4, 2000	work=IGN	access-date=November 22, 2015}}
PowerVR3 KYRO	14,000,000	2001	Imagination	ST	250 nm
PowerVR3 KYRO II	15,000,000	2001	Imagination	ST	180 nm
NV2A	60,000,000	2001	Nvidia	TSMC	150 nm			title=NVIDIA NV2A GPU Specs	url=https://www.techpowerup.com/gpu-specs/nvidia-nv2a.g401	website=TechPowerUp	access-date=21 July 2019}}
NV20	57,000,000	2001	Nvidia	TSMC	150 nm	128 mm2	445,000
NV25	63,000,000	2002	Nvidia	TSMC	150 nm	142 mm2	444,000
NV28	36,000,000	2002	Nvidia	TSMC	150 nm	101 mm2	356,000
NV17/18	29,000,000	2002	Nvidia	TSMC	150 nm	65 mm2	446,000
R200	60,000,000	2001	ATI	TSMC	150 nm	68 mm2	882,000
R300	107,000,000	2002	ATI	TSMC	150 nm	218 mm2	490,800
R360	117,000,000	2003	ATI	TSMC	150 nm	218 mm2	536,700
NV34	45,000,000	2003	Nvidia	TSMC	150 nm	124 mm2	363,000
NV34b	45,000,000	2004	Nvidia	TSMC	140 nm	91 mm2	495,000
NV30	125,000,000	2003	Nvidia	TSMC	130 nm	199 mm2	628,000
NV31	80,000,000	2003	Nvidia	TSMC	130 nm	121 mm2	661,000
NV35/38	135,000,000	2003	Nvidia	TSMC	130 nm	207 mm2	652,000
NV36	82,000,000	2003	Nvidia	IBM	130 nm	133 mm2	617,000
R480	160,000,000	2004	ATI	TSMC	130 nm	297 mm2	538,700
NV40	222,000,000	2004	Nvidia	IBM	130 nm	305 mm2	727,900
NV44	75,000,000	2004	Nvidia	IBM	130 nm	110 mm2	681,800
NV41	222,000,000	2005	Nvidia	TSMC	110 nm	225 mm2	986,700
NV42	198,000,000	2005	Nvidia	TSMC	110 nm	222 mm2	891,900
NV43	146,000,000	2005	Nvidia	TSMC	110 nm	154 mm2	948,100
G70	303,000,000	2005	Nvidia	TSMC, Chartered	110 nm	333 mm2	909,900
Xenos	232,000,000	2005	ATI	TSMC	90 nm	182 mm2	1,275,000
RSX Reality Synthesizer	300,000,000	2005	Nvidia, Sony	Sony	90 nm	186 mm2	1,613,000
R520	321,000,000	2005	ATI	TSMC	90 nm	288 mm2	1,115,000
RV530	157,000,000	2005	ATI	TSMC	90 nm	150 mm2	1,047,000
RV515	107,000,000	2005	ATI	TSMC	90 nm	100 mm2	1,070,000
R580	384,000,000	2006	ATI	TSMC	90 nm	352 mm2	1,091,000
G71	278,000,000	2006	Nvidia	TSMC	90 nm	196 mm2	1,418,000
G72	112,000,000	2006	Nvidia	TSMC	90 nm	81 mm2	1,383,000
G73	177,000,000	2006	Nvidia	TSMC	90 nm	125 mm2	1,416,000
G80	681,000,000	2006	Nvidia	TSMC	90 nm	480 mm2	1,419,000
G86 Tesla	210,000,000	2007	Nvidia	TSMC	80 nm	127 mm2	1,654,000
G84 Tesla	289,000,000	2007	Nvidia	TSMC	80 nm	169 mm2	1,710,000
RV560	330,000,000	2006	ATI	TSMC	80 nm	230 mm2	1,435,000
R600	700,000,000	2007	ATI	TSMC	80 nm	420 mm2	1,667,000
RV610	180,000,000	2007	ATI	TSMC	65 nm	85 mm2	2,118,000
RV630	390,000,000	2007	ATI	TSMC	65 nm	153 mm2	2,549,000
G92	754,000,000	2007	Nvidia	TSMC, UMC	65 nm	324 mm2	2,327,000
G94 Tesla	505,000,000	2008	Nvidia	TSMC	65 nm	240 mm2	2,104,000
G96 Tesla	314,000,000	2008	Nvidia	TSMC	65 nm	144 mm2	2,181,000
G98 Tesla	210,000,000	2008	Nvidia	TSMC	65 nm	86 mm2	2,442,000
GT200	1,400,000,000	2008	Nvidia	TSMC	65 nm	576 mm2	2,431,000
RV620	181,000,000	2008	ATI	TSMC	55 nm	67 mm2	2,701,000
RV635	378,000,000	2008	ATI	TSMC	55 nm	135 mm2	2,800,000
RV710	242,000,000	2008	ATI	TSMC	55 nm	73 mm2	3,315,000
RV730	514,000,000	2008	ATI	TSMC	55 nm	146 mm2	3,521,000
RV670	666,000,000	2008	ATI	TSMC	55 nm	192 mm2	3,469,000
RV770	956,000,000	2008	ATI	TSMC	55 nm	256 mm2	3,734,000
RV790	959,000,000	2008	ATI	TSMC	55 nm	282 mm2	3,401,000
G92b Tesla	754,000,000	2008	Nvidia	TSMC, UMC	55 nm	260 mm2	2,900,000
G94b Tesla	505,000,000	2008	Nvidia	TSMC, UMC	55 nm	196 mm2	2,577,000
G96b Tesla	314,000,000	2008	Nvidia	TSMC, UMC	55 nm	121 mm2	2,595,000
GT200b Tesla	1,400,000,000	2008	Nvidia	TSMC, UMC	55 nm	470 mm2	2,979,000
GT218 Tesla	260,000,000	2009	Nvidia	TSMC	40 nm	57 mm2	4,561,000
GT216 Tesla	486,000,000	2009	Nvidia	TSMC	40 nm	100 mm2	4,860,000
GT215 Tesla	727,000,000	2009	Nvidia	TSMC	40 nm	144 mm2	5,049,000
RV740	826,000,000	2009	ATI	TSMC	40 nm	137 mm2	6,029,000
Cypress RV870	2,154,000,000	2009	ATI	TSMC	40 nm	334 mm2	6,449,000
Juniper RV840	1,040,000,000	2009	ATI	TSMC	40 nm	166 mm2	6,265,000
Redwood RV830	627,000,000	2010	AMD (ATI)	TSMC	40 nm	104 mm2	6,029,000
Cedar RV810	292,000,000	2010	AMD	TSMC	40 nm	59 mm2	4,949,000
Cayman RV970	2,640,000,000	2010	AMD	TSMC	40 nm	389 mm2	6,789,000
Barts RV940	1,700,000,000	2010	AMD	TSMC	40 nm	255 mm2	6,667,000
Turks RV930	716,000,000	2011	AMD	TSMC	40 nm	118 mm2	6,068,000
Caicos RV910	370,000,000	2011	AMD	TSMC	40 nm	67 mm2	5,522,000
GF100 Fermi	3,200,000,000	2010	Nvidia	TSMC	40 nm	526 mm2	6,084,000	last=Glaskowsky	first=Peter	url=http://news.cnet.com/8301-13512_3-10369441-23.html	archive-url=https://web.archive.org/web/20120127213001/http://news.cnet.com/8301-13512_3-10369441-23.html	url-status=dead	archive-date=2012-01-27	title=ATI and Nvidia face off-obliquely	publisher= CNET	access-date=2014-08-09}}
GF110 Fermi	3,000,000,000	2010	Nvidia	TSMC	40 nm	520 mm2	5,769,000
GF104 Fermi	1,950,000,000	2011	Nvidia	TSMC	40 nm	332 mm2	5,873,000
GF106 Fermi	1,170,000,000	2010	Nvidia	TSMC	40 nm	238 mm2	4,916,000
GF108 Fermi	585,000,000	2011	Nvidia	TSMC	40 nm	116 mm2	5,043,000
GF119 Fermi	292,000,000	2011	Nvidia	TSMC	40 nm	79 mm2	3,696,000
Tahiti GCN1	4,312,711,873	2011	AMD	TSMC	28 nm	365 mm2	11,820,000
Cape Verde GCN1	1,500,000,000	2012	AMD	TSMC	28 nm	123 mm2	12,200,000
Pitcairn GCN1	2,800,000,000	2012	AMD	TSMC	28 nm	212 mm2	13,210,000
GK110 Kepler	7,080,000,000	2012	Nvidia	TSMC	28 nm	561 mm2	12,620,000	title=NVIDIA Kepler GK110 Architecture	url=https://staff.cs.manchester.ac.uk/~fumie/internal/KeplerArchitecture.pdf	publisher=NVIDIA	date=2012	access-date=9 January 2024}}
GK104 Kepler	3,540,000,000	2012	Nvidia	TSMC	28 nm	294 mm2	12,040,000
GK106 Kepler	2,540,000,000	2012	Nvidia	TSMC	28 nm	221 mm2	11,490,000
GK107 Kepler	1,270,000,000	2012	Nvidia	TSMC	28 nm	118 mm2	10,760,000
GK208 Kepler	1,020,000,000	2013	Nvidia	TSMC	28 nm	79 mm2	12,910,000
Oland GCN1	1,040,000,000	2013	AMD	TSMC	28 nm	90 mm2	11,560,000
Bonaire GCN2	2,080,000,000	2013	AMD	TSMC	28 nm	160 mm2	13,000,000
Durango (Xbox One)	4,800,000,000	2013	AMD	TSMC	28 nm	375 mm2	12,800,000	last1=Kan	first1=Michael	title=Xbox Series X May Give Your Wallet a Workout Due to High Chip Manufacturing Costs	url=https://uk.pcmag.com/video-game-consoles/128235/xbox-series-x-may-give-your-wallet-a-workout-due-to-high-chip-manufacturing-costs	access-date=5 September 2020	work=PCMag	date=18 August 2020}}
Liverpool (PlayStation 4)		2013	AMD	TSMC	28 nm	348 mm2
Hawaii GCN2	6,300,000,000	2013	AMD	TSMC	28 nm	438 mm2	14,380,000
GM200 Maxwell	8,000,000,000	2015	Nvidia	TSMC	28 nm	601 mm2	13,310,000
GM204 Maxwell	5,200,000,000	2014	Nvidia	TSMC	28 nm	398 mm2	13,070,000
GM206 Maxwell	2,940,000,000	2014	Nvidia	TSMC	28 nm	228 mm2	12,890,000
GM107 Maxwell	1,870,000,000	2014	Nvidia	TSMC	28 nm	148 mm2	12,640,000
Tonga GCN3	5,000,000,000	2014	AMD	TSMC, GlobalFoundries	28 nm	366 mm2	13,660,000
Fiji GCN3	8,900,000,000	2015	AMD	TSMC	28 nm	596 mm2	14,930,000
Durango 2 (Xbox One S)	5,000,000,000	2016	AMD	TSMC	16 nm	240 mm2	20,830,000
Neo (PlayStation 4 Pro)	5,700,000,000	2016	AMD	TSMC	16 nm	325 mm2	17,540,000
Ellesmere/Polaris 10 GCN4	5,700,000,000	2016	AMD	Samsung, GlobalFoundries	14 nm	232 mm2	24,570,000
Baffin/Polaris 11 GCN4	3,000,000,000	2016	AMD	Samsung, GlobalFoundries	14 nm	123 mm2	24,390,000
Lexa/Polaris 12 GCN4	2,200,000,000	2017	AMD	Samsung, GlobalFoundries	14 nm	101 mm2	21,780,000
GP100 Pascal	15,300,000,000	2016	Nvidia	TSMC, Samsung	16 nm	610 mm2	25,080,000
GP102 Pascal	11,800,000,000	2016	Nvidia	TSMC, Samsung	16 nm	471 mm2	25,050,000	url=https://www.techpowerup.com/gpu-specs/?architecture=Pascal&sort=generation	title=GPU Database: Pascal	website=TechPowerUp	date=July 26, 2023 }}
GP104 Pascal	7,200,000,000	2016	Nvidia	TSMC	16 nm	314 mm2	22,930,000
GP106 Pascal	4,400,000,000	2016	Nvidia	TSMC	16 nm	200 mm2	22,000,000
GP107 Pascal	3,300,000,000	2016	Nvidia	Samsung	14 nm	132 mm2	25,000,000
GP108 Pascal	1,850,000,000	2017	Nvidia	Samsung	14 nm	74 mm2	25,000,000
Scorpio (Xbox One X)	6,600,000,000	2017	AMD	TSMC	16 nm	367 mm2	17,980,000	url=https://www.techpowerup.com/gpu-specs/xbox-one-x-gpu.c2977	title=AMD Xbox One X GPU	website=www.techpowerup.com	access-date=2020-02-05}}
Vega 10 GCN5	12,500,000,000	2017	AMD	Samsung, GlobalFoundries	14 nm	484 mm2	25,830,000
GV100 Volta	21,100,000,000	2017	Nvidia	TSMC	12 nm	815 mm2	25,890,000	url=https://devblogs.nvidia.com/parallelforall/inside-volta/	title=Inside Volta: The World's Most Advanced Data Center GPU	first1=Luke	last1=Durant	first2=Olivier	last2=Giroux	first3=Mark	last3=Harris	first4=Nick	last4=Stam	date=May 10, 2017	website=Nvidia developer blog}}
TU102 Turing	18,600,000,000	2018	Nvidia	TSMC	12 nm	754 mm2	24,670,000
TU104 Turing	13,600,000,000	2018	Nvidia	TSMC	12 nm	545 mm2	24,950,000
TU106 Turing	10,800,000,000	2018	Nvidia	TSMC	12 nm	445 mm2	24,270,000
TU116 Turing	6,600,000,000	2019	Nvidia	TSMC	12 nm	284 mm2	23,240,000
TU117 Turing	4,700,000,000	2019	Nvidia	TSMC	12 nm	200 mm2	23,500,000
Vega 20 GCN5	13,230,000,000	2018	AMD	TSMC	7 nm	331 mm2	39,970,000
Navi 10 RDNA	10,300,000,000	2019	AMD	TSMC	7 nm	251 mm2	41,040,000
Navi 12 RDNA		2020	AMD	TSMC	7 nm
Navi 14 RDNA	6,400,000,000	2019	AMD	TSMC	7 nm	158 mm2	40,510,000
Arcturus CDNA	25,600,000,000	2020	AMD	TSMC	7 nm	750 mm2	34,100,000
GA100 Ampere	54,200,000,000	2020	Nvidia	TSMC	7 nm	826 mm2	65,620,000	url=https://www.tomshardware.com/news/nvidia-ampere-A100-gpu-7nm	title=Nvidia Unveils Its Next-Generation 7nm Ampere A100 GPU for Data Centers, and It's Absolutely Massive	first=Jared	last=Walton	date=May 14, 2020	work=Tom's Hardware}}
GA102 Ampere	28,300,000,000	2020	Nvidia	Samsung	8 nm	628 mm2	45,035,000
GA103 Ampere	22,000,000,000	2022	Nvidia	Samsung	8 nm	496 mm2	44,400,000
GA104 Ampere	17,400,000,000	2020	Nvidia	Samsung	8 nm	392 mm2	44,390,000
GA106 Ampere	12,000,000,000	2021	Nvidia	Samsung	8 nm	276 mm2	43,480,000		url=https://www.techpowerup.com/gpu-specs/nvidia-ga106.g966	title=NVIDIA GA106 specs	website=TechPowerUp	access-date=2023-03-22
GA107 Ampere	8,700,000,000	2021	Nvidia	Samsung	8 nm	200 mm2	43,500,000
Navi 21 RDNA2	26,800,000,000	2020	AMD	TSMC	7 nm	520 mm2	51,540,000
Navi 22 RDNA2	17,200,000,000	2021	AMD	TSMC	7 nm	335 mm2	51,340,000
Navi 23 RDNA2	11,060,000,000	2021	AMD	TSMC	7 nm	237 mm2	46,670,000
Navi 24 RDNA2	5,400,000,000	2022	AMD	TSMC	6 nm	107 mm2	50,470,000
Aldebaran CDNA2	58,200,000,000 (MCM)	2021	AMD	TSMC	6 nm	1448–1474 mm2
1480 mm2	39,500,000–40,200,000
39,200,000
36,800,000–39,100,000
GH100 Hopper	80,000,000,000	2022	Nvidia	TSMC	4 nm	814 mm2	98,280,000
AD102 Ada Lovelace	76,300,000,000	2022	Nvidia	TSMC	4 nm	608.4 mm2	125,411,000
AD103 Ada Lovelace	45,900,000,000	2022	Nvidia	TSMC	4 nm	378.6 mm2	121,240,000	title=NVIDIA confirms Ada 102/103/104 GPU specs, AD104 has more transistors than GA102	url=https://videocardz.com/newz/nvidia-confirms-ada-102-103-104-gpu-specs-ad104-has-more-transistors-than-ga102	website=VideoCardz	date=2022-09-23}}
AD104 Ada Lovelace	35,800,000,000	2022	Nvidia	TSMC	4 nm	294.5 mm2	121,560,000
AD106 Ada Lovelace		2023	Nvidia	TSMC	4 nm	190 mm2		{{cite web	url=https://www.tomshardware.com/news/nvidia-ad106-and-ad107-gpus-pictured	title=Alleged Nvidia AD106 and AD107 GPU Pics, Specs, Die Sizes Revealed	website=Tom's Hardware	date=2023-02-03	url=https://wccftech.com/nvidia-geforce-rtx-4060-ti-ad106-350-gpu-pictured-uses-samsung-gddr6-dies/	title=NVIDIA GeForce RTX 4060 Ti "AD106-350" GPU Pictured, Uses Samsung GDDR6 Dies	website=WCCFtech	date=2023-04-28
AD107 Ada Lovelace		2023	Nvidia	TSMC	4 nm	146 mm2		{{cite web	url=https://wccftech.com/nvidias-smallest-ada-gpu-the-ad107-400-for-geforce-rtx-4060-gpus-pictured/	title=NVIDIA's Smallest Ada GPU, The AD107-400, For GeForce RTX 4060 GPUs Pictured	website=WCCFtech	date=2023-05-21
Navi 31 RDNA3	57,700,000,000 (MCM)
45,400,000,000 (GCD)
6×2,050,000,000 (MCD)	2022	AMD	TSMC	5 nm (GCD)
6 nm (MCD)	531 mm2 (MCM)
306 mm2 (GCD)
6×37.5 mm2 (MCD)	109,200,000 (MCM)
132,400,000 (GCD)
54,640,000 (MCD)
Navi 32 RDNA3	28,100,000,000 (MCM)	2023	AMD	TSMC	5 nm (GCD)
6 nm (MCD)	350 mm2 (MCM)
200 mm2 (GCD)
4×37.5 mm2 (MCD)	80,200,000 (MCM)
Navi 33 RDNA3	13,300,000,000	2023	AMD	TSMC	6 nm	204 mm2	65,200,000
Aqua Vanjaram CDNA3	153,000,000,000 (MCM)	2023	AMD	TSMC	5 nm (GCD)
6 nm (MCD)
GB200 Grace Blackwell	208,000,000,000 (MCM)	2024	Nvidia	TSMC	4 nm
GB202 Blackwell	92,200,000,000	2025	Nvidia	TSMC	4 nm	750 mm2	122,600,000
GB203 Blackwell	45,600,000,000	2025	Nvidia	TSMC	4 nm	378 mm2	120,600,000
GB205 Blackwell	31,100,000,000	2025	Nvidia	TSMC	4 nm	263 mm2	118,300,000
GB206 Blackwell	21,900,000,000	2025	Nvidia	TSMC	4 nm	181 mm2	121,000,000
GB207 Blackwell	16,900,000,000	2025	Nvidia	TSMC	4 nm	149 mm2	113,400,000
Navi 44 RDNA4	29,700,000,000	2025	AMD	TSMC	4 nm	199 mm2	149,200,000
Navi 48 RDNA4	53,900,000,000	2025	AMD	TSMC	4 nm	357 mm2	151,000,000

FPGA

A field-programmable gate array (FPGA) is an integrated circuit designed to be configured by a customer or a designer after manufacturing.

FPGA	Transistor count	Date of introduction	Designer	Manufacturer	Process	Area	Transistor density, tr./mm2
Virtex	70,000,000	1997	Xilinx
Virtex-E	200,000,000	1998	Xilinx
Virtex-II	350,000,000	2000	Xilinx		130 nm
Virtex-II PRO	430,000,000	2002	Xilinx
Virtex-4	1,000,000,000	2004	Xilinx		90 nm
Virtex-5	1,100,000,000	2006	Xilinx	TSMC	65 nm
Stratix IV	2,500,000,000	2008	Altera	TSMC	40 nm
Stratix V	3,800,000,000	2011	Altera	TSMC	28 nm
Arria 10	5,300,000,000	2014	Altera	TSMC	20 nm
Virtex-7 2000T	6,800,000,000	2011	Xilinx	TSMC	28 nm
Stratix 10 SX 2800	17,000,000,000	TBD	Intel	Intel	14 nm	560 mm2	30,400,000
Virtex-Ultrascale VU440	20,000,000,000	Q1 2015	Xilinx	TSMC	20 nm
Virtex-Ultrascale+ VU19P	35,000,000,000	2020	Xilinx	TSMC	16 nm	900 mm2	38,900,000
Versal VC1902	37,000,000,000	2H 2019	Xilinx	TSMC	7 nm
Stratix 10 GX 10M	43,300,000,000	Q4 2019	Intel	Intel	14 nm	1,400 mm2	30,930,000
Versal VP1802	92,000,000,000	2021	Xilinx	TSMC	7 nm

Memory

Semiconductor memory is an electronic data storage device, often used as computer memory, implemented on integrated circuits. Nearly all semiconductor memories since the 1970s have used MOSFETs (MOS transistors), replacing earlier bipolar junction transistors. There are two major types of semiconductor memory: random-access memory (RAM) and non-volatile memory (NVM). In turn, there are two major RAM types: dynamic random-access memory (DRAM) and static random-access memory (SRAM), as well as two major NVM types: flash memory and read-only memory (ROM).

Typical CMOS SRAM consists of six transistors per cell. For DRAM, 1T1C, which means one transistor and one capacitor structure, is common. Capacitor charged or not is used to store 1 or 0. In flash memory, the data is stored in floating gates, and the resistance of the transistor is sensed to interpret the data stored. Depending on how fine scale the resistance could be separated, one transistor could store up to three bits, meaning eight distinctive levels of resistance possible per transistor. However, a finer scale comes with the cost of repeatability issues, and hence reliability. Typically, low grade 2-bits MLC flash is used for flash drives, so a 16 GB flash drive contains roughly 64 billion transistors.

For SRAM chips, six-transistor cells (six transistors per bit) was the standard. DRAM chips during the early 1970s had three-transistor cells (three transistors per bit), before single-transistor cells (one transistor per bit) became standard since the era of 4Kb DRAM in the mid-1970s. In single-level flash memory, each cell contains one floating-gate MOSFET (one transistor per bit), whereas multi-level flash contains 2, 3 or 4 bits per transistor.

Flash memory chips are commonly stacked up in layers, up to 128-layer in production, and 136-layer managed, and available in end-user devices up to 69-layer from manufacturers.

Chip name	Capacity (bits)	RAM type	Transistor count	Date of introduction	Manufacturer(s)	Process	Area	Transistor
density
(tr./mm2)	Ref
	1-bit	SRAM (cell)	6	1963	Fairchild				title=1966: Semiconductor RAMs Serve High-speed Storage Needs	url=https://www.computerhistory.org/siliconengine/semiconductor-rams-serve-high-speed-storage-needs/	website=Computer History Museum	access-date=19 June 2019}}
	1-bit	DRAM (cell)	1	1965	Toshiba
	8-bit	SRAM (bipolar)	48	1965	SDS, Signetics
SP95	16-bit	SRAM (bipolar)	80	1965	IBM
TMC3162	16-bit	SRAM (TTL)	96	1966	Transitron
		SRAM (MOS)		1966	NEC
256-bit	DRAM (IC)	256	1968	Fairchild
64-bit	SRAM (PMOS)	384	1968	Fairchild
144-bit	SRAM (NMOS)	864	1968	NEC
1101	256-bit	SRAM (PMOS)	1,536	1969	Intel	12,000 nm			url=http://download.intel.com/museum/research/arc_collect/timeline/TimelineDateSort7_05.pdf	title=A chronological list of Intel products. The products are sorted by date.	date=July 2005	work=Intel museum	publisher=Intel Corporation	archive-url=https://web.archive.org/web/20070809053720/http://download.intel.com/museum/research/arc_collect/timeline/TimelineDateSort7_05.pdf	archive-date=August 9, 2007	access-date=July 31, 2007}}
1102	1 Kb	DRAM (PMOS)	3,072	1970	Intel, Honeywell
1103	1 Kb	DRAM (PMOS)	3,072	1970	Intel	8,000 nm	10 mm2	307	title=Intel: 35 Years of Innovation (1968–2003)	url=https://www.intel.com/Assets/PDF/General/35yrs.pdf	publisher=Intel	year=2003	access-date=26 June 2019	archive-url=https://web.archive.org/web/20211104070452/https://www.intel.com/Assets/PDF/General/35yrs.pdf	archive-date=4 November 2021	url-status=dead}}
μPD403	1 Kb	DRAM (NMOS)	3,072	1971	NEC
	2 Kb	DRAM (PMOS)	6,144	1971	General Instrument		12.7 mm2	484	last1=Gealow	first1=Jeffrey Carl	title=Impact of Processing Technology on DRAM Sense Amplifier Design	url=https://core.ac.uk/download/pdf/4426308.pdf	publisher=Massachusetts Institute of Technology	via=CORE	date=10 August 1990	pages=149–166	access-date=25 June 2019}}
2102	1 Kb	SRAM (NMOS)	6,144	1972	Intel				title=Silicon Gate MOS 2102A	url=https://drive.google.com/file/d/0B9rh9tVI0J5mMmZlYWRlMDQtNDYzYS00OWJkLTg4YzYtZDYzMzc5Y2ZlYmVk/view	publisher=Intel	access-date=27 June 2019}}
	8 Kb	DRAM (PMOS)	8,192	1973	IBM		18.8 mm2	436
5101	1 Kb	SRAM (CMOS)	6,144	1974	Intel
2116	16 Kb	DRAM (NMOS)	16,384	1975	Intel
2114	4 Kb	SRAM (NMOS)	24,576	1976	Intel				title=Component Data Catalog	date=1978	publisher=Intel	pages=3–94	url=http://bitsavers.trailing-edge.com/components/intel/_dataBooks/1978_Intel_Component_Data_Catalog.pdf	access-date=27 June 2019}}
	4 Kb	SRAM (CMOS)	24,576	1977	Toshiba
64 Kb	DRAM (NMOS)	65,536	1977	NTT		35.4 mm2	1851
DRAM (VMOS)	65,536	1979	Siemens		25.2 mm2	2601
16 Kb	SRAM (CMOS)	98,304	1980	Hitachi, Toshiba				url=http://maltiel-consulting.com/Semiconductor_technology_memory.html	title=Memory	website=STOL (Semiconductor Technology Online)	access-date=25 June 2019	archive-date=November 2, 2023	archive-url=https://web.archive.org/web/20231102131915/http://maltiel-consulting.com/Semiconductor_technology_memory.html	url-status=dead}}
256 Kb	DRAM (NMOS)	262,144	1980	NEC	1,500 nm	41.6 mm2	6302
NTT	1,000 nm	34.4 mm2	7620
64 Kb	SRAM (CMOS)	393,216	1980	Matsushita
288 Kb	DRAM	294,912	1981	IBM		25 mm2	11,800
64 Kb	SRAM (NMOS)	393,216	1982	Intel	1,500 nm
256 Kb	SRAM (CMOS)	1,572,864	1984	Toshiba	1,200 nm
8 Mb	DRAM	8,388,608		Hitachi
16 Mb	DRAM (CMOS)	16,777,216	1987	NTT	700 nm	148 mm2	113,400
4 Mb	SRAM (CMOS)	25,165,824	1990	NEC, Toshiba, Hitachi, Mitsubishi
64 Mb	DRAM (CMOS)	67,108,864	1991	Matsushita, Mitsubishi, Fujitsu, Toshiba	400 nm
KM48SL2000	16 Mb	SDRAM	16,777,216	1992	Samsung
	16 Mb	SRAM (CMOS)	100,663,296	1992	Fujitsu, NEC	400 nm
256 Mb	DRAM (CMOS)	268,435,456	1993	Hitachi, NEC	250 nm
1 Gb	DRAM	1,073,741,824		NEC	250 nm
Hitachi	160 nm
SDRAM	1,073,741,824	1996	Mitsubishi	150 nm
SDRAM (SOI)	1,073,741,824	1997	Hyundai				title=History: 1990s	url=https://www.skhynix.com/eng/about/history1990.jsp	website=SK Hynix	access-date=6 July 2019	archive-date=February 5, 2021	archive-url=https://web.archive.org/web/20210205032928/https://www.skhynix.com/eng/about/history1990.jsp	url-status=dead }}
4 Gb	DRAM (4-bit)	1,073,741,824	1997	NEC	150 nm
DRAM	4,294,967,296	1998	Hyundai
8 Gb	SDRAM (DDR3)	8,589,934,592		Samsung	50 nm
16 Gb	SDRAM (DDR3)	17,179,869,184	2008
32 Gb	SDRAM (HBM2)	34,359,738,368	2016	Samsung	20 nm
64 Gb	SDRAM (HBM2)	68,719,476,736	2017
128 Gb	SDRAM (DDR4)	137,438,953,472	2018	Samsung	10 nm
	RRAM (3DSoC)		2019	SkyWater Technology	90 nm

Chip name	Capacity (bits)	Flash type	FGMOS transistor count	Date of introduction	Manufacturer(s)	Process	Area	Transistor
density
(tr./mm2)	Ref
	256 Kb	NOR	262,144	1985	Toshiba	2,000 nm
1 Mb	NOR	1,048,576	1989	Seeq, Intel
4 Mb	NAND	4,194,304	1989	Toshiba	1,000 nm
16 Mb	NOR	16,777,216	1991	Mitsubishi	600 nm
DD28F032SA	32 Mb	NOR	33,554,432	1993	Intel		280 mm2	120,000	title=DD28F032SA Datasheet	url=http://www.datasheetcatalog.com/datasheets_pdf/D/D/2/8/DD28F032SA.shtml	publisher=Intel	access-date=27 June 2019}}
	64 Mb	NOR	67,108,864	1994	NEC	400 nm
NAND	67,108,864	1996	Hitachi
128 Mb	NAND	134,217,728	1996	Samsung, Hitachi
256 Mb	NAND	268,435,456	1999	Hitachi, Toshiba	250 nm
512 Mb	NAND	536,870,912	2000	Toshiba
1 Gb	2-bit NAND	536,870,912	2001	Samsung
Toshiba, SanDisk	160 nm
2 Gb	NAND	2,147,483,648	2002	Samsung, Toshiba				title=Our Proud Heritage from 2000 to 2009	url=https://www.samsung.com/semiconductor/about-us/history-03/	website=Samsung Semiconductor	publisher=Samsung	access-date=25 June 2019}}
8 Gb	NAND	8,589,934,592	2004	Samsung	60 nm
16 Gb	NAND	17,179,869,184	2005	Samsung	50 nm
32 Gb	NAND	34,359,738,368	2006	Samsung	40 nm
THGAM	128 Gb	Stacked NAND	128,000,000,000		Toshiba	56 nm	252 mm2	507,900,000	title=TOSHIBA COMMERCIALIZES INDUSTRY'S HIGHEST CAPACITY EMBEDDED NAND FLASH MEMORY FOR MOBILE CONSUMER PRODUCTS	url=http://www.toshiba.com/taec/news/press_releases/2007/memy_07_470.jsp	archive-url=https://web.archive.org/web/20101123023805/http://www.toshiba.com/taec/news/press_releases/2007/memy_07_470.jsp	url-status=dead	archive-date=November 23, 2010	access-date=23 November 2010	work=Toshiba	date=April 17, 2007}}
THGBM	256 Gb	Stacked NAND	256,000,000,000	2008	Toshiba	43 nm	353 mm2	725,200,000	title=Toshiba Launches the Largest Density Embedded NAND Flash Memory Devices	url=https://www.toshiba.co.jp/about/press/2008_08/pr0701.htm	access-date=21 June 2019	publisher=Toshiba	date=7 August 2008}}
THGBM2	1 Tb	Stacked 4-bit NAND	256,000,000,000	2010	Toshiba	32 nm	374 mm2	684,500,000	title=Toshiba Launches Industry's Largest Embedded NAND Flash Memory Modules	url=https://www.toshiba.co.jp/about/press/2010_06/pr1701.htm	access-date=21 June 2019	work=Toshiba	date=17 June 2010}}
KLMCG8GE4A	512 Gb	Stacked 2-bit NAND	256,000,000,000	2011	Samsung		192 mm2	1,333,000,000
KLUFG8R1EM	4 Tb	Stacked 3-bit V-NAND	1,365,333,333,504	2017	Samsung		150 mm2	9,102,000,000	url=https://www.anandtech.com/show/12120/samsung-starts-production-of-512-gb-ufs-chips	archive-url=https://web.archive.org/web/20171205221122/https://www.anandtech.com/show/12120/samsung-starts-production-of-512-gb-ufs-chips	url-status=dead	archive-date=December 5, 2017	title=Samsung Starts Production of 512 GB UFS NAND Flash Memory: 64-Layer V-NAND, 860 MB/s Reads	last1=Shilov	first1=Anton	date=December 5, 2017	work=AnandTech	access-date=23 June 2019}}
eUFS (1TB)	8 Tb	Stacked 4-bit V-NAND	2,048,000,000,000	2019	Samsung		150 mm2	13,650,000,000	last1=Manners	first1=David	title=Samsung makes 1TB flash eUFS module	url=https://www.electronicsweekly.com/news/business/samsung-makes-1tb-flash-module-2019-01/	access-date=23 June 2019	work=Electronics Weekly	date=30 January 2019}}
	1 Tb	232L TLC NAND die	333,333,333,333	2022	Micron		68.5 mm2
(memory array)	4,870,000,000
(14.6 Gbit/mm2)	{{cite web
	16 Tb	232L package	5,333,333,333,333	2022	Micron		68.5 mm2
(memory array)	77,900,000,000
(16×14.6 Gbit/mm2)

Chip name	Capacity (bits)	ROM type	Transistor count	Date of introduction	Manufacturer(s)	Process	Area	Ref
		PROM		1956	Arma			author=Han-Way Huang	title=Embedded System Design with C805	url=https://books.google.com/books?id=3zRtCgAAQBAJ&pg=PA22	date=5 December 2008	publisher=Cengage Learning	isbn=978-1-111-81079-5	page=22	url-status=live	archive-url=https://web.archive.org/web/20180427092847/https://books.google.com/books?id=3zRtCgAAQBAJ&pg=PA22	archive-date=27 April 2018}}
1 Kb	ROM (MOS)	1,024	1965	General Microelectronics			title=1965: Semiconductor Read-Only-Memory Chips Appear	url=https://www.computerhistory.org/siliconengine/semiconductor-read-only-memory-chips-appear/	website=Computer History Museum	access-date=20 June 2019}}
3301	1 Kb	ROM (bipolar)	1,024	1969	Intel
1702	2 Kb	EPROM (MOS)	2,048	1971	Intel		15 mm2
	4 Kb	ROM (MOS)	4,096	1974	AMD, General Instrument
2708	8 Kb	EPROM (MOS)	8,192	1975	Intel
	2 Kb	EEPROM (MOS)	2,048	1976	Toshiba			last1=Iizuka	first1=H.	last2=Masuoka	first2=F.	last3=Sato	first3=Tai	last4=Ishikawa	first4=M.	title=Electrically alterable avalanche-injection-type MOS READ-ONLY memory with stacked-gate structure	journal=IEEE Transactions on Electron Devices	date=1976	volume=23	issue=4	pages=379–387	doi=10.1109/T-ED.1976.18415	issn=0018-9383	bibcode=1976ITED...23..379I	s2cid=30491074}}
μCOM-43 ROM	16 Kb	PROM (PMOS)	16,000	1977	NEC
2716	16 Kb	EPROM (TTL)	16,384	1977	Intel			title=2716: 16K (2K x 8) UV ERASABLE PROM	url=https://amigan.yatho.com/2716EPROM.pdf	publisher=Intel	access-date=27 June 2019	archive-date=September 13, 2020	archive-url=https://web.archive.org/web/20200913213609/https://amigan.yatho.com/2716EPROM.pdf	url-status=dead }}
EA8316F	16 Kb	ROM (NMOS)	16,384	1978	Electronic Arrays		436 mm2	title=1982 CATALOG	url=http://bitsavers.trailing-edge.com/components/nec/_dataBooks/1982_NEC_Microcomputer_Catalog.pdf	publisher=NEC Electronics	access-date=20 June 2019}}
2732	32 Kb	EPROM	32,768	1978	Intel
2364	64 Kb	ROM	65,536	1978	Intel
2764	64 Kb	EPROM	65,536	1981	Intel	3,500 nm
27128	128 Kb	EPROM	131,072	1982	Intel
27256	256 Kb	EPROM (HMOS)	262,144	1983	Intel			title=27256 Datasheet	url=https://datasheet.octopart.com/D27256-2-Intel-datasheet-17852618.pdf	publisher=Intel	access-date=2 July 2019}}
	256 Kb	EPROM (CMOS)	262,144	1983	Fujitsu
512 Kb	EPROM (NMOS)	524,288	1984	AMD	1,700 nm
27512	512 Kb	EPROM (HMOS)	524,288	1984	Intel			title=D27512-30 Datasheet	url=https://www.datasheet.live/index.php?title=Special:PdfViewer&url=https%3A%2F%2Fpdf.datasheet.live%2Fe6dbd5cf%2Fintel.com%2FD27512-30.pdf	publisher=Intel	access-date=2 July 2019}}
	1 Mb	EPROM (CMOS)	1,048,576	1984	NEC	1,200 nm
4 Mb	EPROM (CMOS)	4,194,304	1987	Toshiba	800 nm
16 Mb	EPROM (CMOS)	16,777,216	1990	NEC	600 nm
MROM	16,777,216	1995	AKM, Hitachi

Transistor computers

Main article: Transistor computer

Part of an [[IBM 7070]] card cage populated with [[Standard Modular System]] cards

Before transistors were invented, relays were used in commercial tabulating machines and experimental early computers. The world's first working programmable, fully automatic digital computer, the 1941 Z3 22-bit word length computer, had 2,600 relays, and operated at a clock frequency of about 4–5 Hz. The 1940 Complex Number Computer had fewer than 500 relays, but it was not fully programmable. The earliest practical computers used vacuum tubes and solid-state diode logic. ENIAC had 18,000 vacuum tubes, 7,200 crystal diodes, and 1,500 relays, with many of the vacuum tubes containing two triode elements.

The second generation of computers were transistor computers that featured boards filled with discrete transistors, solid-state diodes and magnetic memory cores. The experimental 1953 48-bit Transistor Computer, developed at the University of Manchester, is widely believed to be the first transistor computer to come into operation anywhere in the world (the prototype had 92 point-contact transistors and 550 diodes). A later version the 1955 machine had a total of 250 junction transistors and 1,300 point-contact diodes. The Computer also used a small number of tubes in its clock generator, so it was not the first fully transistorized. The ETL Mark III, developed at the Electrotechnical Laboratory in 1956, may have been the first transistor-based electronic computer using the stored program method. It had about "130 point-contact transistors and about 1,800 germanium diodes were used for logic elements, and these were housed on 300 plug-in packages which could be slipped in and out." The 1958 decimal architecture IBM 7070 was the first transistor computer to be fully programmable. It had about 30,000 alloy-junction germanium transistors and 22,000 germanium diodes, on approximately 14,000 Standard Modular System (SMS) cards. The 1959 MOBIDIC, short for "MOBIle DIgital Computer", at 12,000 pounds (6.0 short tons) mounted in the trailer of a semi-trailer truck, was a transistorized computer for battlefield data.

The third generation of computers used integrated circuits (ICs). The 1962 15-bit Apollo Guidance Computer used "about 4,000 "Type-G" (3-input NOR gate) circuits" for about 12,000 transistors plus 32,000 resistors. 33 modules (for logic, excluding RAM?) = 3960 ICs?

http://www.righto.com/2019/01/inside-apollo-guidance-computers-core.html "The AGC is implemented with dozens of modules in two trays. [..] The AGC's logic is entirely built from 3-input NOR gates (two per integrated circuit), and the address decoder is no exception. The image below shows logic module A14. (The other logic modules look essentially the same, but the internal printed circuit board is wired differently.) The logic modules all have a similar design: two rows of 30 ICs on each side, for 120 ICs in total, or 240 3-input NOR gates. (Module A14 has one blank location on each side, for 118 ICs in total.) [..] Each integrated circuit implemented two NOR gates using RTL (resistor-transistor logic), an early logic family. These ICs were costly; they cost $20-$30 each (around $150 in current dollars). There wasn't much inside each IC, just three transistors and eight resistors.

The IBM System/360, introduced 1964, used discrete transistors in hybrid circuit packs. The 1965 12-bit PDP-8 CPU had 1409 discrete transistors and over 10,000 diodes, on many cards. Later versions, starting with the 1968 PDP-8/I, used integrated circuits. The PDP-8 was later reimplemented as a microprocessor as the Intersil 6100, see below.

The next generation of computers were the microcomputers, starting with the 1971 Intel 4004, which used MOS transistors. These were used in home computers or personal computers (PCs).

This list includes early transistorized computers (second generation) and IC-based computers (third generation) from the 1950s and 1960s.

Computer	Transistor count	Year	Manufacturer	Notes	Ref
Transistor Computer	92	1953	University of Manchester	Point-contact transistors, 550 diodes. Lacked stored program capability.	title=1953: Transistorized Computers Emerge	url=https://www.computerhistory.org/siliconengine/transistorized-computers-emerge/	website=Computer History Museum	access-date=19 June 2019}}
TRADIC	700	1954	Bell Labs	Point-contact transistors
Transistor Computer (full size)	250	1955	University of Manchester	Discrete point-contact transistors, 1,300 diodes
IBM 608	3,000	1955	IBM	Germanium transistors
ETL Mark III	130	1956	Electrotechnical Laboratory	Point-contact transistors, 1,800 diodes, stored program capability	title=ETL Mark III Transistor-Based Computer	url=http://museum.ipsj.or.jp/en/computer/dawn/0011.html	website=IPSJ Computer Museum	publisher=Information Processing Society of Japan	access-date=19 June 2019}}
Metrovick 950	200	1956	Metropolitan-Vickers	Discrete junction transistors
NEC NEAC-2201	600	1958	NEC	Germanium transistors
Hitachi MARS-1	1,000	1958	Hitachi
IBM 7070	30,000	1958	IBM	Alloy-junction germanium transistors, 22,000 diodes
Matsushita MADIC-I	400	1959	Matsushita	Bipolar transistors
NEC NEAC-2203	2,579	1959	NEC
Toshiba TOSBAC-2100	5,000	1959	Toshiba
IBM 7090	50,000	1959	IBM	Discrete germanium transistors
PDP-1	2,700	1959	Digital Equipment Corporation	Discrete transistors
Olivetti Elea 9003	?	1959	Olivetti	300,000 (?) discrete transistors and diodes
Mitsubishi MELCOM 1101	3,500	1960	Mitsubishi	Germanium transistors
M18 FADAC	1,600	1960	Autonetics	Discrete transistors
CPU of IBM 7030 Stretch	169,100	1961	IBM	World's fastest computer from 1961 to 1964	{{cite conference
D-17B	1,521	1962	Autonetics	Discrete transistors
NEC NEAC-L2	16,000	1964	NEC	Ge transistors
CDC 6600 (entire computer)	400,000	1964	Control Data Corporation	World's fastest computer from 1964 to 1969	{{cite book
IBM System/360	?	1964	IBM	Hybrid circuits
PDP-8 "Straight-8"	Intersil IM6100]] clone of it had 4,000--	1965	Digital Equipment Corporation	discrete transistors, 10,000 diodes
PDP-8/S	1,001	1966	Digital Equipment Corporation	discrete transistors, diodes
PDP-8/I	1,409	1968	Digital Equipment Corporation	74 series TTL circuits
Apollo Guidance Computer Block I	12,300	1966	Raytheon / MIT Instrumentation Laboratory	4,100 ICs, each containing a 3-transistor, 3-input NOR gate. (Block II had 2,800 dual 3-input NOR gates ICs.)

Logic functions

Transistor count for generic logic functions is based on static CMOS implementation.

Function	Transistor count
NOT	2
Buffer	4
NAND 2-input	4
NOR 2-input	4
AND 2-input	6
OR 2-input	6
NAND 3-input	6
NOR 3-input	6
XOR 2-input	6
XNOR 2-input	8
MUX 2-input with TG	6
MUX 4-input with TG	18
NOT MUX 2-input	8
MUX 4-input	24
1-bit full adder	24
1-bit adder–subtractor	48
AND-OR-INVERT	6
Latch, D gated	8
Flip-flop, edge triggered dynamic D with reset	12
8-bit multiplier	3,000
16-bit multiplier	9,000
32-bit multiplier	21,000
small-scale integration	2–100
medium-scale integration	100–500
large-scale integration	500–20,000
very-large-scale integration	20,000–1,000,000
ultra-large scale integration	1,000,000

Parallel systems

Historically, each processing element in earlier parallel systems—like all CPUs of that time—was a serial computer built out of multiple chips. As transistor counts per chip increases, each processing element could be built out of fewer chips, and then later each multi-core processor chip could contain more processing elements.

Goodyear MPP: (1983?) 8 pixel processors per chip, 3,000 to 8,000 transistors per chip.

Brunel University Scape (single-chip array-processing element): (1983) 256 pixel processors per chip, 120,000 to 140,000 transistors per chip.

Cell Broadband Engine: (2006) with 9 cores per chip, had 234 million transistors per chip.

Other devices

Device type	Device name	Transistor count	Date of introduction	Designer(s)	Manufacturer(s)	MOS process	Area	Transistor density, tr./mm2	Ref
Deep learning engine / IPU	Colossus GC2	23,600,000,000	2018	Graphcore	TSMC	16 nm	~800 mm2	29,500,000
Deep learning engine / IPU	Wafer Scale Engine	1,200,000,000,000	2019	Cerebras	TSMC	16 nm	46,225 mm2	25,960,000	url=https://www.extremetech.com/extreme/296906-cerebras-systems-unveils-1-2-trillion-transistor-wafer-scale-processor-for-ai	title=Cerebras Systems Unveils 1.2 Trillion Transistor Wafer-Scale Processor for AI	website=extremetech.com	last=Hruska	first=Joel	date=August 2019	access-date=2019-09-06}}
Deep learning engine / IPU	Wafer Scale Engine 2	2,600,000,000,000	2020	Cerebras	TSMC	7 nm	46,225 mm2	56,250,000	title=Cerebras Unveils 2nd Gen Wafer Scale Engine: 850,000 Cores, 2.6 Trillion Transistors - ExtremeTech	url=https://www.extremetech.com/computing/322070-cerebras-unveils-2nd-gen-wafer-scale-engine-850000-cores-2-6-trillion-transistors	access-date=2021-04-22	website=www.extremetech.com	date=April 21, 2021 }}
Network switch	NVLink4 NVSwitch	25,100,000,000	2022	Nvidia	TSMC	N4 (4 nm)	294 mm2	85,370,000

Transistor density

The transistor density is the number of transistors that are fabricated per unit area, typically measured in terms of the number of transistors per square millimeter (mm2). The transistor density usually correlates with the gate length of a semiconductor node (also known as a semiconductor manufacturing process), typically measured in nanometers (nm). , the semiconductor node with the highest transistor density is TSMC's 5 nanometer node, with 171.3million transistors per square millimeter (note this corresponds to a transistor-transistor spacing of 76.4 nm, far greater than the relative meaningless "5nm")

MOSFET nodes

Node name	Transistor density (transistors/mm2)	Production year	Process	MOSFET	Manufacturer(s)	Ref
		1960	20,000 nm	PMOS	Bell Labs
		1960	20,000 nm	NMOS
		1963		CMOS	Fairchild	title=1963: Complementary MOS Circuit Configuration is Invented	url=https://www.computerhistory.org/siliconengine/complementary-mos-circuit-configuration-is-invented/	access-date=6 July 2019	website=Computer History Museum}}
		1964		PMOS	General Microelectronics
		1968	20,000 nm	CMOS	RCA	last1=Lojek	first1=Bo	title=History of Semiconductor Engineering	date=2007	publisher=Springer Science & Business Media	isbn=9783540342588	page=330	url=https://books.google.com/books?id=2cu1Oh_COv8C&pg=PA330}}
		1969	12,000 nm	PMOS	Intel
		1970	10,000 nm	CMOS	RCA
		1970	8,000 nm	PMOS	Intel
		1971	10,000 nm	PMOS	Intel
		1971		PMOS	General Instrument
		1973		NMOS	Texas Instruments
		1973		NMOS	Mostek
		1973	7,500 nm	NMOS	NEC
		1973	6,000 nm	PMOS	Toshiba	last1=Belzer	first1=Jack	last2=Holzman	first2=Albert G.	last3=Kent	first3=Allen	title=Encyclopedia of Computer Science and Technology: Volume 10 Linear and Matrix Algebra to Microorganisms: Computer-Assisted Identification	date=1978	publisher=CRC Press	isbn=9780824722609	page=402	url=https://books.google.com/books?id=iBsUXrgKBKkC&pg=PA402}}
		1976	5,000 nm	NMOS	Hitachi, Intel
		1976	5,000 nm	CMOS	RCA
		1976	4,000 nm	NMOS	Zilog
		1976	3,000 nm	NMOS	Intel
		1977		NMOS	NTT
		1978	3,000 nm	CMOS	Hitachi
		1978	2,500 nm	NMOS	Texas Instruments
		1978	2,000 nm	NMOS	NEC, NTT
		1979		VMOS	Siemens
		1979	1,000 nm	NMOS	NTT
		1980	1,000 nm	NMOS	NTT
		1983	2,000 nm	CMOS	Toshiba
		1983	1,500 nm	CMOS	Intel
		1983	1,200 nm	CMOS	Intel
		1984	800 nm	CMOS	NTT
		1987	700 nm	CMOS	Fujitsu
		1989	600 nm	CMOS	Mitsubishi, NEC, Toshiba
		1989	500 nm	CMOS	Hitachi, Mitsubishi, NEC, Toshiba
		1991	400 nm	CMOS	Matsushita, Mitsubishi, Fujitsu, Toshiba
		1993	350 nm	CMOS	Sony
		1993	250 nm	CMOS	Hitachi, NEC
3LM	32,000	1994	350 nm	CMOS	NEC
		1995	160 nm	CMOS	Hitachi
		1996	150 nm	CMOS	Mitsubishi
TSMC 180nm		1998	180 nm	CMOS	TSMC
CS80		1999	180 nm	CMOS	Fujitsu
		1999	180 nm	CMOS	Intel, Sony, Toshiba
CS85		1999	170 nm	CMOS	Fujitsu
Samsung 140nm		1999	140 nm	CMOS	Samsung
		2001	130 nm	CMOS	Fujitsu, Intel
Samsung 100nm		2001	100 nm	CMOS	Samsung
		2002	90 nm	CMOS	Sony, Toshiba, Samsung
CS100		2003	90 nm	CMOS	Fujitsu
Intel 90nm	1,450,000	2004	90 nm	CMOS	Intel	last1=Cutress	first1=Ian	title=Intel's 10nm Cannon Lake and Core i3-8121U Deep Dive Review	url=https://www.anandtech.com/show/13405/intel-10nm-cannon-lake-and-core-i3-8121u-deep-dive-review/3	archive-url=https://web.archive.org/web/20190130194809/https://www.anandtech.com/show/13405/intel-10nm-cannon-lake-and-core-i3-8121u-deep-dive-review/3	url-status=dead	archive-date=January 30, 2019	website=AnandTech	access-date=19 June 2019}}
Samsung 80nm		2004	80 nm	CMOS	Samsung	url=https://www.samsung.com/semiconductor/insights/news-events/samsung-shows-industrys-first-2-gigabit-ddr2-sdram/	title=Samsung Shows Industry's First 2-Gigabit DDR2 SDRAM	date=20 September 2004	work=Samsung Semiconductor	access-date=25 June 2019	publisher=Samsung}}
		2004	65 nm	CMOS	Fujitsu, Toshiba
Samsung 60nm		2004	60 nm	CMOS	Samsung
TSMC 45nm		2004	45 nm	CMOS	TSMC
Elpida 90nm		2005	90 nm	CMOS	Elpida Memory
CS200		2005	65 nm	CMOS	Fujitsu
Samsung 50nm		2005	50 nm	CMOS	Samsung	title=History	url=https://www.samsung.com/us/aboutsamsung/company/history/	website=Samsung Electronics	publisher=Samsung	access-date=19 June 2019}}
Intel 65nm	2,080,000	2006	65 nm	CMOS	Intel
Samsung 40nm		2006	40 nm	CMOS	Samsung
Toshiba 56nm		2007	56 nm	CMOS	Toshiba
Matsushita 45nm		2007	45 nm	CMOS	Matsushita
Intel 45nm	3,300,000	2008	45 nm	CMOS	Intel	url=https://spectrum.ieee.org/intel-now-packs-100-million-transistors-in-each-square-millimeter	title=Intel Now Packs 100 Million Transistors in Each Square Millimeter	website=IEEE Spectrum: Technology, Engineering, and Science News	date=March 30, 2017	access-date=2018-11-14}}
Toshiba 43nm		2008	43 nm	CMOS	Toshiba
TSMC 40nm		2008	40 nm	CMOS	TSMC
Toshiba 32nm		2009	32 nm	CMOS	Toshiba	url=http://www.toshiba.co.jp/about/press/2009_02/pr1102.htm	title=Toshiba Makes Major Advances in NAND Flash Memory with 3-bit-per-cell 32nm generation and with 4-bit-per-cell 43nm technology	date=11 February 2009	work=Toshiba	access-date=21 June 2019}}
Intel 32nm	7,500,000	2010	32 nm	CMOS	Intel
		2010	20 nm	CMOS	Hynix, Samsung	title=History: 2010s	url=https://www.skhynix.com/eng/about/history2010.jsp	website=SK Hynix	access-date=8 July 2019	archive-date=April 29, 2021	archive-url=https://web.archive.org/web/20210429202547/https://www.skhynix.com/eng/about/history2010.jsp	url-status=dead }}
Intel 22nm	15,300,000	2012	22 nm	CMOS	Intel
IMFT 20nm		2012	20 nm	CMOS	IMFT
Toshiba 19nm		2012	19 nm	CMOS	Toshiba
Hynix 16nm		2013	16 nm	FinFET	SK Hynix
TSMC 16nm	28,880,000	2013	16 nm	FinFET	TSMC	url=https://fuse.wikichip.org/news/2261/tsmc-announces-6-nanometer-process/	title=TSMC Announces 6-Nanometer Process	last=Schor	first=David	date=2019-04-16	website=WikiChip Fuse	access-date=2019-05-31}}
Samsung 10nm	51,820,000	2013	10 nm	FinFET	Samsung	url=https://fuse.wikichip.org/news/1443/vlsi-2018-samsungs-8nm-8lpp-a-10nm-extension/	title=VLSI 2018: Samsung's 8nm 8LPP, a 10nm extension	date=2018-07-01	website=WikiChip Fuse	access-date=2019-05-31}}
Intel 14nm	37,500,000	2014	14 nm	FinFET	Intel
14LP	32,940,000	2015	14 nm	FinFET	Samsung
TSMC 10nm	52,510,000	2016	10 nm	FinFET	TSMC	title=10nm Technology	url=https://www.tsmc.com/english/dedicatedFoundry/technology/10nm.htm	publisher=TSMC	access-date=30 June 2019}}
12LP	36,710,000	2017	12 nm	FinFET	GlobalFoundries, Samsung	url=https://fuse.wikichip.org/news/1497/vlsi-2018-globalfoundries-12nm-leading-performance-12lp/	title=VLSI 2018: GlobalFoundries 12nm Leading-Performance, 12LP	last=Schor	first=David	date=2018-07-22	website=WikiChip Fuse	access-date=2019-05-31}}
N7FF	96,500,000	2017	7 nm	FinFET	TSMC	last1=Jones	first1=Scotten	title=TSMC and Samsung 5nm Comparison	url=https://semiwiki.com/semiconductor-manufacturers/samsung-foundry/8157-tsmc-and-samsung-5nm-comparison/	website=Semiwiki	date=May 3, 2019	access-date=30 July 2019}}
8LPP	61,180,000	2018	8 nm	FinFET	Samsung
7LPE	95,300,000	2018	7 nm	FinFET	Samsung
Intel 10nm	100,760,000	2018	10 nm	FinFET	Intel
5LPE	126,530,000	2018	5 nm	FinFET	Samsung
N7FF+	113,900,000	2019	7 nm	FinFET	TSMC
CLN5FF	171,300,000	2019	5 nm	FinFET	TSMC	url=https://fuse.wikichip.org/news/2207/tsmc-starts-5-nanometer-risk-production/	title=TSMC Starts 5-Nanometer Risk Production	last=Schor	first=David	date=2019-04-06	website=WikiChip Fuse	access-date=2019-04-07}}
Intel 7	100,760,000	2021	7 nm	FinFET	Intel
4LPE	145,700,000	2021	4 nm	FinFET	Samsung	url=https://news.samsung.com/global/samsung-foundry-innovations-power-the-future-of-big-data-ai-ml-and-smart-connected-devices	title=Samsung Foundry Innovations Power the Future of Big Data, AI/ML and Smart, Connected Devices	date=2021-10-07}}
N4	url=https://fuse.wikichip.org/news/6439/tsmc-extends-its-5nm-family-with-a-new-enhanced-performance-n4p-node/	title=TSMC Extends Its 5nm Family With A New Enhanced-Performance N4P Node	website=WikiChip	date=2021-10-26}}	2021	4 nm	FinFET	TSMC
N4P	196,600,000	2022	4 nm	FinFET	TSMC
3GAE	202,850,000	2022	3 nm	MBCFET	Samsung
N3	314,730,000	2022	3nm	FinFET	TSMC
N4X		2023	4nm	FinFET	TSMC	url=https://pr.tsmc.com/english/news/2895	title=TSMC Introduces N4X Process (press release)	website=TSMC	date=2021-12-16}}
N3E		2023	3nm	FinFET	TSMC
3GAP		2023	3 nm	MBCFET	Samsung
Intel 4	160,000,000	2023	4 nm	FinFET	Intel
Intel 3		2023	3 nm	FinFET	Intel
Intel 20A		2024	2 nm	RibbonFET	Intel
Intel 18A		2025	sub-2 nm	RibbonFET	Intel
2GAP		2025	2 nm	MBCFET	Samsung
N2		2025	2 nm	GAAFET	TSMC	url=https://www.anandtech.com/print/17356/tsmc-roadmap-update-n3e-in-2024-n2-in-2026-major-changes-incoming	archive-url=https://web.archive.org/web/20220425143712/https://www.anandtech.com/print/17356/tsmc-roadmap-update-n3e-in-2024-n2-in-2026-major-changes-incoming	url-status=dead	archive-date=April 25, 2022	title=TSMC roadmap update	website=AnandTech	date=2022-04-22}}
Samsung 1.4 nm		2027	1.4 nm		Samsung	{{cite web

Gate count

In certain applications, the term gate count is preferred over the term transistor count. It refers to the number of logic gates built with transistors and other electronic devices needed to implement a design.

Notes

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