From Surf Wiki (app.surf) — the open knowledge base
Homojunction

A homojunction is a semiconductor interface that occurs between layers of similar semiconductor material; these materials have equal band gaps but typically have different doping. In most practical cases a homojunction occurs at the interface between an n-type (donor doped) and p-type (acceptor doped) semiconductor such as silicon, this is called a p–n junction.
This is not a necessary condition as the only requirement is that the same semiconductor (same band gap) is found on both sides of the junction, in contrast to a heterojunction. An n-type to n-type junction, for example, would be considered a homojunction even if the doping levels are different.
The different doping level will cause band bending, and a depletion region will be formed at the interface, as shown in the figure to the right.
Notes
References
- Yang, Edward S (1978). Fundamentals of semiconductor devices. McGraw-Hill. ISBN 0070722366
References
- Yang 1978, p. 141.
This article was imported from Wikipedia and is available under the Creative Commons Attribution-ShareAlike 4.0 License. Content has been adapted to SurfDoc format. Original contributors can be found on the article history page.
Ask Mako anything about Homojunction — get instant answers, deeper analysis, and related topics.
Research with MakoFree with your Surf account
Create a free account to save articles, ask Mako questions, and organize your research.
Sign up freeThis content may have been generated or modified by AI. CloudSurf Software LLC is not responsible for the accuracy, completeness, or reliability of AI-generated content. Always verify important information from primary sources.
Report